Effect of SnO2 on improvement on the microwave dielectric properties of Ba2Ti9O20

[[abstract]]Effect of SnO2 addition on the crystal structure/microstructure and the related microwave dielectric properties of the Ba2Ti9O20 were systematically investigated. Incorporation of SnO2 markedly stabilized the phase constituent and microstructure for the Ba2Ti9O20 such that high quality materials can be obtained in a much wider processing window. The sintered density of the Ba2Ti9O20 increased linearly, but the microwave dielectric constant (K) decreased monotonically, with the SnO2 doping concentration. The quality factor (Qxf) of the materials increased firstly due to the addition of SnO2, but decreased slightly with further increase in SnO2 content. The best microwave dielectric properties obtained are K=38.5 and Qxf=31,500 GHz, which occurs for the 0.055 mol SnO2-doped and 1350 degrees C/4 h sintered samples. These properties are markedly better than those for undoped materials (K=38.8 and Qxf=26,500 GHz).[[fileno]]2060105010042[[department]]工程與系統科學