Minimized Constrains for Lateral Profiling of Hot-Carrier-Induced Oxide Charge and Interface Traps in MOSFETs

[[abstract]]For better understanding the hot-carrier-induced reliability problems, a charge-pumping technique has been developed to profile the Qot and Nit directly from the experimental results. However, the key neutralization condition is acquired by trial and error, which takes much time and effort. Therefore, a technique of two-step neutralization is proposed to find out the appropriate neutralization condition in this work. This two-step neutralization combined with the error-reduction method is shown to carry out the profiling more quickly and precisely.[[fileno]]2060110010006[[department]]工程與系統科學