In situ X-ray reflectivity measurement of thin film growth during vacuum deposition

[[abstract]]The X-ray reflectivity method was used to measure in situ the surface roughness of a thin film during growth. In this experiment, aluminum was deposited on the surface of a silicon wafer under a vacuum condition of 10(-6) Ton. We found that the surface roughness increased as the film became thicker. A large growth exponent of beta = 1 was obtained. The data were compared with die scaling behavior of the surface interfacial width that was theoretically predicted and experimentally verified for non-equilibrium growth conditions.[[fileno]]2060135010041[[department]]工程與系統科學