High density metal-insulator-metal capacitor based on Zr O2 Al2 O3 Zr O2 laminate dielectric

[[abstract]]The metal-insulator-metal (MIM) capacitor for analog and rf applications has been developed with Zr O2 Al2 O3 Zr O2 laminate as the dielectric. The high capacitance density of 21.54 fFμ m2 can be achieved due to the tetragonal Zr O2 which makes the higher dielectric constant of 38.7. This MIM capacitor also demonstrates the quadratic voltage coefficient of 2443 ppm V2 and the good leakage current of 2.11× 10-6 A cm2 at 2 V which is ascribed to the inserted Al2 O3. Since the Schottky emission is suggested as the major dielectric conduction mechanism, a further reduced quadratic voltage coefficient and leakage characteristic can be realized by using a high work-function electrode. The combination of the promising electrical properties and the desirable process integration renders this structure highly suitable for advanced MIM capacitors.[[fileno]]2060114010019[[department]]工程與系統科學