[[abstract]]© 2000 Institute of Electrical and Electronics Engineers-In this work, a new source-controlled self-verified (SCSV) programming method for multilevel storage in EEPROM is discussed. Multilevel storage is a cost-effective approach to improve storage capacity and reduce bit-cost. However, the reduced interlevel margin impacts the reliability and available endurance. The new SCSV programming approach using simultaneous programming and verification can control threshold voltages by different source voltages. Linear relationship between threshold voltage and source voltage is obtained. Furthermore, the endurance of multilevel storage is extended up to 106 cycles. The accurate control of threshold voltage improves the reliability of m...
A novel concept of Soft Secondary Electron Programming (SSEP) is introduced and shown to be a promis...
Memory (EEPROM) with 4 kbits (512 × 8-bit) non-volatile storage. By using an internal redundant stor...
In this work, we demonstrate the feasibility of using channel initiated secondary electron (CHISEL) ...
[[abstract]]In this work, a new source-controlled self-verified (SCSV) programming method for multil...
Multi-level (ML) storage is becoming an important option to achieve high-density flash EEPROMs. This...
he trade-off between speed and dispersion of programmed threshold voltages is investigated in 0.25 m...
[[abstract]]In this paper, we propose a new programming technique for multilevel AND-type flash memo...
[[abstract]]A novel multilevel/analog electrically erasable programmable read only memory (EEPROM) c...
We demonstrate CHISEL programming operation of fully scaled high-density flash EEPROMs. Single cell ...
We demonstrate CHISEL programming operation of fully scaled high-density flash EEPROMs. Single c...
A method for program verify is disclosed, such as one in which a threshold voltage of a memory cell ...
Memory devices and methods for operating a memory cell are disclosed, such as a method that uses two...
Achieving a reliable multi-level operation in resistive random access memory (RRAM) arrays is curren...
A novel concept of soft secondary electron programming (SSEP) is introduced and shown to be a promis...
[[abstract]]A new self-convergent constant current programming achieved by a ramp-up source voltage ...
A novel concept of Soft Secondary Electron Programming (SSEP) is introduced and shown to be a promis...
Memory (EEPROM) with 4 kbits (512 × 8-bit) non-volatile storage. By using an internal redundant stor...
In this work, we demonstrate the feasibility of using channel initiated secondary electron (CHISEL) ...
[[abstract]]In this work, a new source-controlled self-verified (SCSV) programming method for multil...
Multi-level (ML) storage is becoming an important option to achieve high-density flash EEPROMs. This...
he trade-off between speed and dispersion of programmed threshold voltages is investigated in 0.25 m...
[[abstract]]In this paper, we propose a new programming technique for multilevel AND-type flash memo...
[[abstract]]A novel multilevel/analog electrically erasable programmable read only memory (EEPROM) c...
We demonstrate CHISEL programming operation of fully scaled high-density flash EEPROMs. Single cell ...
We demonstrate CHISEL programming operation of fully scaled high-density flash EEPROMs. Single c...
A method for program verify is disclosed, such as one in which a threshold voltage of a memory cell ...
Memory devices and methods for operating a memory cell are disclosed, such as a method that uses two...
Achieving a reliable multi-level operation in resistive random access memory (RRAM) arrays is curren...
A novel concept of soft secondary electron programming (SSEP) is introduced and shown to be a promis...
[[abstract]]A new self-convergent constant current programming achieved by a ramp-up source voltage ...
A novel concept of Soft Secondary Electron Programming (SSEP) is introduced and shown to be a promis...
Memory (EEPROM) with 4 kbits (512 × 8-bit) non-volatile storage. By using an internal redundant stor...
In this work, we demonstrate the feasibility of using channel initiated secondary electron (CHISEL) ...