Substitutional boron-doping of carbon nanotubes

[[abstract]]© 2002 Elsevier-The substitutional placement of boron within the lattice of carbon nanotubes yields quite different transport properties for single walled nanotubes (SWNTs) as compared to multi-walled nanotubes (MWNTs). Boron "doping" of the MWNTs results in an acceptor state in the local density of states (LDOS) that lies near the Fermi level and can be directly correlated with features in the thermoelectric power (TEP) of B-doped MWNT mats. Transport measurements of individual B-doped MWNTs exhibit features associated with variable range hopping. In contrast, B-doping of SWNTs results in features in the density of states further from the Fermi level, and transport of the SWNTs shows an unusual variability in rectification not observed in the MWNT case. This suggests that boron has been introduced into the lattice of these.[[department]]電機工程學