High-Temperature and High-Frequency Operation of 1.3 µm AlGaInAs/InP Laser Diodes Using Silicon Oxide Planarization

[[abstract]]© 2007 Electrochemical Society - In this article, a self-terminated oxide polish (STOP) planarization technique is utilized to fabricate high-temperature and high-speed 1.3 μm AlGaInAsInP ridge-waveguide laser diodes (LDs). The as-cleaved LDs fabricated by this STOP technique exhibit a threshold current of 8.5 and 57.5 mA, and a light output power of 27 and 2.4 mW at 100 mA for 0 and 130°C, respectively. The characteristic temperature (T0) is 85.5 K from 0 to 80°C and 54.1 K from 80 to 130°C. The full width at half maximum of the lateral far-field angle is 34° for the conventional ridge LDs and reduces to 22° for the LDs by the STOP technique. The 3 dB modulation bandwidth at 100 mA of the LDs can reach 16.9 at 20°C and 10.9 GHz at 90°C.[[department]]電機工程學