Growth and photoluminescence study of low concentration InP layers grown by liquid-phase epitaxy in the presence of erbium

[[abstract]]© 1993 Electrochemical Society - InP layers with electron concentrations as low as 7×1013 cm-3 were grown by liquid-phase epitaxy using rare-earth erbium as the donor-gettering source. The presence of Er during growth causes a decrease in electron concentration and the strong suppression of donor-related luminescence transitions due to the effective removal of residual donors in the growth solution. The exciton-related lines of the low concentration InP layers are observed by using Er as the gettering source.[[department]]電機工程學