Effects of n-type modulation-doping barriers and a linear graded-composition GaInAsP intermediate layer on the 1.3 µm AlGaInAs/AlGaInAs strain-compensated multiple-quantum-well laser diodes

[[abstract]]© 2006 American Vacuum Society - We report the fabrication, characterization, and comparison of four 1.3 μm AlGaInAsAlGaInAs strain-compensated multiple-quantum-well (SC-MQW) laser structures: (1) sample A-with only an undoped SC-MQW active region, (2) sample B-with an undoped SC-MQW active region and a linear graded-composition (LGC) GaInAsP intermediate layer, (3) sample C-with an n -type modulation-doping (MD) SC-MQW active region, and (4) sample D-with an n -type MD-SC-MQW active region combined with a LGC GaInAsP intermediate layer. The inclusion of either n -type modulation-doped SC-MQW active region or LGC GaInAsP intermediate layer can improve the performance of a laser diode (LD). The LD sample D, which includes both an n -type MD-SC-MQW active region and a LGC GaInAsP intermediate layer, exhibits the best overall performance including a threshold current of 12.5 mA, a characteristic temperature of 85 K in 20-80 °C temperature range, a lasing wavelength shift of 0.38 nmK, and a relaxation frequency response of 9.9 GHz.[[department]]電機工程學