Effects of rapid thermal annealing on InAsP/InP strained multiquantum well laser diodes grown by metal organic chemical vapour deposition

[[abstract]]© 2000 Institute of Electrical and Electronics Engineers - The authors report on the effect of rapid thermal annealing (RTA) on the performance of InAsP/InP strained multiquantum well (SMQW) laser diodes (LDs) grown by metal organic chemical vapour deposition. From the photoluminescence (PL) measurements, the optimal RTA temperature for the InAsP/InP strained single quantum well (SSQW) stack was found to be 700 °C. The 700 °C annealed SSQW stack was found to have a stronger PL peak intensity, no halfwidth broadening and small peak shift, indicating that the degree of interdiffusion of group-V elements can be much reduced. The threshold current and slope efficiency of the 700 °C RTA SMQW LDs can be reduced significantly as compared to those of as-grown LDs.[[department]]電機工程學