[[abstract]]© 2005 Institute of Electrical and Electronics Engineers - Semiconductor lasers fabricated by the traditional process for communication application usually adopt a ridge-waveguide structure for its ease of manufacture. However, the rugged planes of these devices would cause metal coverage problems and interconnection difficulty. A planarization technique based on a self-aligned technique for fabricating the ridge-weaveguide semiconductor laser diode is introduced in this article. The technique is based on a process called "self-terminated oxide polish." By using this technique, metal coverage problems usually encountered in the laser diode with a double trench structure will be reduced. Since the metal pad lies on a th...
International audienceThe development of all-optical, acousto-optical or electro-optical (EO) wavegu...
Fabrication process developments for Bragg reflection lasers have been optimized in this thesis usin...
Blue and violet laser diodes (LDs) made from the (Al,In)GaN material system were first demonstrated ...
[[abstract]]© 2006 Elsevier - In this article, we demonstrated the fabrication of high-speed 1.55-&m...
[[abstract]]© 2007 Electrochemical Society - In this article, a self-terminated oxide polish (STOP) ...
[[abstract]]© 2006 Institute of Electrical and Electronics Engineers - In this letter, we utilize a ...
This paper studies, both theoretically and experimentally, stress-induced effects on the lateral far...
The kink-free output power in 980-nm emitting laser diodes can be increased by 30%-50% in ridge-wave...
Data are presented on various laser and optical devices that utilize native oxidation of Al bearing ...
We have fabricated separate confinement heterostructure, graded index, indium gallium arsenide (InG...
International audienceWe propose a simplified and easier fabrication process flow for the manufactur...
A new flip-chip solder technology has been developed for the precision self-alignment of an optoelec...
Abstract—This paper studies, both theoretically and experi-mentally, stress-induced effects on the l...
Semiconductor corrugated ridge waveguide (CRW) distributed feedback (DFB) lasers offer compelling ad...
This thesis presents the theoretical and experimental examination of broad-area, high-order, distrib...
International audienceThe development of all-optical, acousto-optical or electro-optical (EO) wavegu...
Fabrication process developments for Bragg reflection lasers have been optimized in this thesis usin...
Blue and violet laser diodes (LDs) made from the (Al,In)GaN material system were first demonstrated ...
[[abstract]]© 2006 Elsevier - In this article, we demonstrated the fabrication of high-speed 1.55-&m...
[[abstract]]© 2007 Electrochemical Society - In this article, a self-terminated oxide polish (STOP) ...
[[abstract]]© 2006 Institute of Electrical and Electronics Engineers - In this letter, we utilize a ...
This paper studies, both theoretically and experimentally, stress-induced effects on the lateral far...
The kink-free output power in 980-nm emitting laser diodes can be increased by 30%-50% in ridge-wave...
Data are presented on various laser and optical devices that utilize native oxidation of Al bearing ...
We have fabricated separate confinement heterostructure, graded index, indium gallium arsenide (InG...
International audienceWe propose a simplified and easier fabrication process flow for the manufactur...
A new flip-chip solder technology has been developed for the precision self-alignment of an optoelec...
Abstract—This paper studies, both theoretically and experi-mentally, stress-induced effects on the l...
Semiconductor corrugated ridge waveguide (CRW) distributed feedback (DFB) lasers offer compelling ad...
This thesis presents the theoretical and experimental examination of broad-area, high-order, distrib...
International audienceThe development of all-optical, acousto-optical or electro-optical (EO) wavegu...
Fabrication process developments for Bragg reflection lasers have been optimized in this thesis usin...
Blue and violet laser diodes (LDs) made from the (Al,In)GaN material system were first demonstrated ...