Hydrogen-induced transient effect in carbon-doped InGaP hetero-junction bipolar transistors

[[abstract]]© 2006 Elsevier-The transient effect on the current gain of InGaP hetero-junction bipolar transistors was studied. It was found that this transient effect was caused by hydrogen and eliminated after three or more cycles of thermal annealing at 250°C in nitrogen. A model based on the carbon-hydrogen complex dissociation by thermal anneal is proposed to explain this observation.[[fileno]]2030179010063[[department]]電機工程學