A review of recent developments in focused ion beam applications

[[abstract]]Summary form only given. Submicrometer focused ion beams have been used for selective ion implantation of GaAs and Si depletion-mode FETs and for the gate lithography of n-channel enhancement-mode Si MOSFETs. Maximum transconductance values for the latter devices with tox=100 ? and Lg=0.5 μm were 140 mS/mm. Short-channel effects were minimal in these devices[[fileno]]2030179030012[[department]]電機工程學