First InP/InGaAs PNP HBT grown by metal organic chemical vapordeposition

[[abstract]]The MOCVD growth of InP/InGaAs PNP HBT layers and the successful fabrication and operation at high frequency of devices made on such layers are reported for the first time. The PNP HBTs employed a zinc-doped InP layer as emitter while the base was made with a 500 ?thick n-type InGaAs layer doped at 5?018 cm -3. Microwave measurements indicated fT of more than 11 GHz at JC=8.25?04 A/cm2 for these MOCVD-grown InP/InGaAs PNP HBTs[[fileno]]2030121030002[[department]]電機工程學