Add to ORKG[[abstract]]The dispersion effects of transconductance (g/sub m/) and output resistance (R/sub ds/) in AlGaN/GaN MODFETs were investigated. The dispersion effects of g/sub m/ were found to be much smaller than those of R/sub ds/. Devices under different biases show g/sub m/ dispersion of /spl sim/ 4% to 7%, while R/sub ds/ dispersion of /spl sim/ 19 % to 44% in a frequency range of 50 Hz to 100 kHz. The trapping-detrapping time constants of the dispersion effects were extracted by employing a novel distributed RC network and carrier injection current sources. The time constants estimated are in a range of /spl sim/ 1.5 /spl mu/s to 1 ms.[[fileno]]2030121030005[[department]]電機工程學
The aim of this work is to assess the potentialities of Graphene Field Effect Transistors (G-FET) as...
AlGaN/GaN HFET’s have been analyzed under DC and RF Stimulus in an attempt to analyze the phenomenon...
The considerable variation in intermodulation across wide bandwidths due to trapping and self-heatin...
This paper describes an observed difference in how DC-RF dispersion manifests itself in AlGaN/GaN HF...
This paper describes how dc-radio-frequency (RF) dispersion manifests itself in AlGaN/GaN heterojunc...
International audienceThe performance of GaN transistors is still limited by physical and fabricatio...
International audienceFrequency dispersion of transconductance and output conductance in AlInN/GaN h...
This work presents a theoretical study of a GaN MODFET considering accurate velocity field relation ...
During the past decade, AlGaN/GaN heterostructure field effect transistors (HFETs) have been the foc...
[[abstract]]The impact of RF stress on dispersion and power characteristics of AlGaN/GaN HEMTs are r...
International audienceThe performance of gallium nitride transistors is still limited by technologic...
Detailed time-domain IV waveforms at RF frequencies are employed for characterisation of AlGaN/GaN H...
A novel technique for modeling GaN and GaAs transistors for data communications is proposed. The tec...
A large-signal measurement setup with sinusoidal excitation is used for the characterization of low-...
Les transistors à haute mobilité d’électrons (HEMTs) en Nitrure de Gallium (GaN) s’affirment aujourd...
The aim of this work is to assess the potentialities of Graphene Field Effect Transistors (G-FET) as...
AlGaN/GaN HFET’s have been analyzed under DC and RF Stimulus in an attempt to analyze the phenomenon...
The considerable variation in intermodulation across wide bandwidths due to trapping and self-heatin...
This paper describes an observed difference in how DC-RF dispersion manifests itself in AlGaN/GaN HF...
This paper describes how dc-radio-frequency (RF) dispersion manifests itself in AlGaN/GaN heterojunc...
International audienceThe performance of GaN transistors is still limited by physical and fabricatio...
International audienceFrequency dispersion of transconductance and output conductance in AlInN/GaN h...
This work presents a theoretical study of a GaN MODFET considering accurate velocity field relation ...
During the past decade, AlGaN/GaN heterostructure field effect transistors (HFETs) have been the foc...
[[abstract]]The impact of RF stress on dispersion and power characteristics of AlGaN/GaN HEMTs are r...
International audienceThe performance of gallium nitride transistors is still limited by technologic...
Detailed time-domain IV waveforms at RF frequencies are employed for characterisation of AlGaN/GaN H...
A novel technique for modeling GaN and GaAs transistors for data communications is proposed. The tec...
A large-signal measurement setup with sinusoidal excitation is used for the characterization of low-...
Les transistors à haute mobilité d’électrons (HEMTs) en Nitrure de Gallium (GaN) s’affirment aujourd...
The aim of this work is to assess the potentialities of Graphene Field Effect Transistors (G-FET) as...
AlGaN/GaN HFET’s have been analyzed under DC and RF Stimulus in an attempt to analyze the phenomenon...
The considerable variation in intermodulation across wide bandwidths due to trapping and self-heatin...