Highly scalable ballistic injection AND-type (BiAND) Flash memory
- Wu MY
- Dai SH, Hu SF
- Yang ECS
- Hsu CCH
- King YC
DOI Publisher
Institute of Electrical and Electronics Engineers Inc.Abstract
[[abstract]]An AND-type split-gate Flash memory cell with a trench select gate and a buried n+ source is proposed. This cell, programmed by ballistic source side injection (BSSI), can provide high programming efficiency with a cell size of 5F(2). Furthermore, both the programming speed and the read current are enhanced by the shared select gate configuration.[[fileno]]2030158010011[[department]]電機工程學
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