A long-refresh dynamic/quasi-nonvolatile memory device with 2-nmtunneling oxide
- Ya-Chin King
- Tsu-Jae King
- Chenming Hu
DOI Publisher
Institute of Electrical and Electronics Engineers Inc.Abstract
[[abstract]]A memory device using silicon rich oxide (SRO) as the charge trapping layer for dynamic or quasi-nonvolatile memory application is proposed. The device achieved write and erase speed at low voltage comparable to that of a dynamic-random-access memory (DRAM) cell with a much longer data retention time. This device has a SRO charge trapping layer on top of a very thin tunneling oxide (<2 nm). Using the traps in the SRO layer for charge storage, a symmetrical write/erase characteristics were achieved. This new SRO cell has an erase time much shorter than values of similar devices reported in the literature[[fileno]]2030158010043[[department]]電機工程學
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