Electrical conduction mechanisms of metal/La2O3/Si structure

[[abstract]]Metal-oxide-semiconductor capacitors that incorporate La2O3 dielectric films were deposited by radio frequency magnetron sputtering. In this work, the essential structures and electrical properties of La2O3 thin films were investigated. Capacitance-voltage, energy dispersive x-ray spectrometry, and transmission electron microscopy analyses reveal that an interfacial layer was formed, subsequently reducing the effective dielectric constant of the 700 蚓 annealed La2O3 thin films. The dominant conduction mechanism of the Al/La2O3/p-Si metal-lanthanum oxide-semiconductor capacitor is space-charge-limited current from 300 to 465 K in the accumulation mode. Three different regions, Ohm's law region, trap-filled-limited region, and Child's law region, were observed in the current-density-voltage (J-V) characteristics at room temperature. The activation energy of traps calculated from the Arrhenius plots was about 0.21+/-0.01 eV. The electronic mobility, trap density, dielectric relaxation time, and density of states in the conduction band were determined from the space-charge-limited conduction at room temperature.[[fileno]]2030179010062[[department]]電機工程學