Power performance of InP-based single and double heterojunctionbipolar transistors

[[abstract]]The microwave and power performance of fabricated InP-based single and double heterojunction bipolar transistors (HBTs) is presented. The single heterojunction bipolar transistors (SHBTs), which had a 5000 ? InGaAs collector, had BVCEO of 7.2 V and JCmax of 2×105 A/cm2. The resulting HBTs with 2×10 μm2 emitters produced up to 1.1 mW/μm2 at 8 GHz with efficiencies over 30%. Double heterojunction bipolar transistors (DHBTs) with a 3000-? InP collector had a BVCEO of 9 V and Jc max of 1.1×105 A/cm2, resulting in power densities up to 1.9 mW/μm2 at 8 GHz and a peak efficiency of 46%. Similar DHBTs with a 6000 ? InP collector had a higher BVCEO of 18 V, but the J c max decreased to 0.4×105 A/cm2 due to current blocking at the base-collector junction. Although the 6000 ? InP collector provided higher fmax and gain than the 3000 ? collector, the lower Jc max reduced its maximum power density below that of the SHBT wafer. The impact on power performance of various device characteristics, such as knee voltage, breakdown voltage, and maximum current density, are analyzed and discussed[[fileno]]2030121010001[[department]]電機工程學