High current density InN/AlN heterojunction field-effect transistor with a SiNx gate dielectric layer

[[abstract]]InN/AlN metal-insulator-semiconductor heterojunction field-effect transistors with a gate-modulated drain current and a clear pinch-off characteristic have been demonstrated. The devices were fabricated using high-quality InN (26 nm)/AlN (100 nm) epifilms grown by plasma-assisted molecular-beam epitaxy on Si (111) substrates. The devices exhibited a current density higher than ~530 mA/mm with a 5 μm gate length. The pinch-off voltage was at ~-7 V with an associated drain leakage current less than 10 μA/mm. The observed high current density may be attributed to the high sheet carrier density due to the large spontaneous polarization difference between InN and AlN[[fileno]]2030121010016[[department]]電機工程學