In this work we quantitatively map interface states in energy in a Schottky barrier between aluminum and the vacuum sublimed organic semiconductor terrylene. The density map of these interface states was extracted from the, admittance spectroscopy data. They revealed an interface state density of 2 x 10(12). cm(-2)eV(-1) close to the valence band which decreases slightly towards midgap. Additional do measurements show that the semiconductor bulk activation energy is 0.33 eV which may correspond to an acceptor level. (C) 2002 Elsevier Science B.V. All rights reserved
This article reports on the electronic structure at interfaces found in organic semiconductor device...
The dependence of Schottky barrier formation on surface and interface preparation offers several bro...
This article reports on the electronic structure at interfaces found in organic semiconductor device...
In this work we quantitatively map interface states in energy in a Schottky barrier between aluminum...
In this work we quantitatively map interface states in energy in a Schottky barrier between aluminum...
In this work we quantitatively map interface states in energy in a Schottky barrier between aluminum...
In this work we quantitatively map interface states in energy in a Schottky barrier between aluminum...
Low frequency admittance measurements are used to determine the density of interface states in metal...
The description of the electronic structure of an interface between two materials is one of the main...
Ultraviolet photoelectron spectroscopy has been used to determine the energy level alignment at inte...
The description of the electronic structure of an interface between two materials is one of the main...
The experimental and theoretical progress in understanding the electronic structure and the related ...
The profile of the energy bands of a semiconductor in contact with a metal is determined by the inte...
The relaxed atomic structures, energies, and Schottky barrier heights of six translation states of t...
This article reports on the electronic structure at interfaces found in organic semiconductor device...
This article reports on the electronic structure at interfaces found in organic semiconductor device...
The dependence of Schottky barrier formation on surface and interface preparation offers several bro...
This article reports on the electronic structure at interfaces found in organic semiconductor device...
In this work we quantitatively map interface states in energy in a Schottky barrier between aluminum...
In this work we quantitatively map interface states in energy in a Schottky barrier between aluminum...
In this work we quantitatively map interface states in energy in a Schottky barrier between aluminum...
In this work we quantitatively map interface states in energy in a Schottky barrier between aluminum...
Low frequency admittance measurements are used to determine the density of interface states in metal...
The description of the electronic structure of an interface between two materials is one of the main...
Ultraviolet photoelectron spectroscopy has been used to determine the energy level alignment at inte...
The description of the electronic structure of an interface between two materials is one of the main...
The experimental and theoretical progress in understanding the electronic structure and the related ...
The profile of the energy bands of a semiconductor in contact with a metal is determined by the inte...
The relaxed atomic structures, energies, and Schottky barrier heights of six translation states of t...
This article reports on the electronic structure at interfaces found in organic semiconductor device...
This article reports on the electronic structure at interfaces found in organic semiconductor device...
The dependence of Schottky barrier formation on surface and interface preparation offers several bro...
This article reports on the electronic structure at interfaces found in organic semiconductor device...