Electronic levels in MEH-PPV
- Stallinga, Peter
- Gomes, Henrique L.
- Rost, H.
- Holmes, A. B.
- Harrison, M. G.
- Friend, R. H.
Publication date
January 2000
DOI Publisher
Elsevier BV ISSN
0379-6779 Journal
Synthetic MetalsAbstract
pn-Junctions of MEH-PPV on top of heavily doped n-type silicon were used in electrical measurements. Through deep-level transient-spectroscopy (DLTS)-like measurements, four traps (two majority and two minority traps) could be identified on top of the shallow acceptor level responsible for conduction. Furthermore, evidence is found for interface states. (C) 2000 Published by Elsevier Science S.A. All rights reserved
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