Resistive switching in nanostructured thin films
- Silva, Hugo G.
- Gomes, Henrique L.
- Pogorelov, Y. G.
- Stallinga, Peter
- De Leeuw, Dago M.
- Araújo, J. P.
- Sousa, J. B.
- Meskers, S. C. J.
- Kakazei, G. N.
- Cardoso, S.
- Freitas, P. P.
Publication date
January 2014
DOI Publisher
AIP Publishing Journal
Applied Physics LettersAbstract
Planar capacitor structures based on granular films composed of nanometric ferromagnetic grains embedded in an insulating Al2O3 matrix can switch between a high-conductance and a low-conductance state. The switching properties are induced by a forming process. The ON/OFF resistance ratio is as high as 104 under an electrical field of only 15 kV/m. This resistive switching is accompanied by a capacitive switching between two well-defined voltage-independent states, a behavior that is not readily explained by the filamentary type of conduction
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