Add to ORKGWe demonstrate an AlN/AlGaN high-electron-mobility transistor (HEMT) fabricated on a free-standing AlN substrate. A metal stack, composed of Zr/Al/Mo/Au, was found to show low contact resistivity for source and drain ohmic contacts. The fabricated AlN/AlGaN HEMT exhibited a maximum drain current of 38 mA/mm with a threshold voltage of -3.4 V. Negligible drain current degradation was observed at temperatures from 300 to 573 K, emonstrating that our AlN/AlGaN approach on an AlN substrate is promising for stable high-temperature operation
The Nitrides became publicly known for the realization of the blue LED, which was rewarded with the ...
High quality ohmic contacts were realized in order to obtain an AlGaN/GaN high electron mobility tra...
High quality ohmic contacts were realized in order to obtain an AlGaN/GaN high electron mobility tra...
AlN/ GaN high electron mobility transistors (HEMTs) intrinsically have high two-dimensional electron...
The ever increasing demand for higher power devices at higher frequencies has prompted much research...
AlGaN/GaN metal–insulator–semiconductor high electron mobility transistors (MIS-HEMTs) are promising...
In this work, we demonstrate various ohmic contact forma-tion processes using an AlN/GaN (MOS)HEMT s...
Low defect AlN/GaN high electron mobility transistor (HEMT) structures, with very high values of ele...
Process development of AlN/GaN MOS-HEMTs is presented, along with issues and problems concerning the...
The authors report on the fabrication and characterization of low-temperature processed gold-free Oh...
AlGaN-channel high-electron mobility transistors (HEMTs) on an AlN substrate have been fabricated fo...
The authors report on the fabrication and characterization of low-temperature processed gold-free Oh...
An InAlN/AlN/GaN HEMT with Au-free Ta-based ohmic contacts and a high-quality PECVD SiN passivation ...
An optimized fabrication process of ohmic contacts is proposed to reduce the source/drain access res...
Process development of AlN/GaN MOS-HEMTs is presented, along with issues and problems concerning the...
The Nitrides became publicly known for the realization of the blue LED, which was rewarded with the ...
High quality ohmic contacts were realized in order to obtain an AlGaN/GaN high electron mobility tra...
High quality ohmic contacts were realized in order to obtain an AlGaN/GaN high electron mobility tra...
AlN/ GaN high electron mobility transistors (HEMTs) intrinsically have high two-dimensional electron...
The ever increasing demand for higher power devices at higher frequencies has prompted much research...
AlGaN/GaN metal–insulator–semiconductor high electron mobility transistors (MIS-HEMTs) are promising...
In this work, we demonstrate various ohmic contact forma-tion processes using an AlN/GaN (MOS)HEMT s...
Low defect AlN/GaN high electron mobility transistor (HEMT) structures, with very high values of ele...
Process development of AlN/GaN MOS-HEMTs is presented, along with issues and problems concerning the...
The authors report on the fabrication and characterization of low-temperature processed gold-free Oh...
AlGaN-channel high-electron mobility transistors (HEMTs) on an AlN substrate have been fabricated fo...
The authors report on the fabrication and characterization of low-temperature processed gold-free Oh...
An InAlN/AlN/GaN HEMT with Au-free Ta-based ohmic contacts and a high-quality PECVD SiN passivation ...
An optimized fabrication process of ohmic contacts is proposed to reduce the source/drain access res...
Process development of AlN/GaN MOS-HEMTs is presented, along with issues and problems concerning the...
The Nitrides became publicly known for the realization of the blue LED, which was rewarded with the ...
High quality ohmic contacts were realized in order to obtain an AlGaN/GaN high electron mobility tra...
High quality ohmic contacts were realized in order to obtain an AlGaN/GaN high electron mobility tra...