Add to ORKGUn dispositif cryogenique a ete fabrique pour Ie mesure du pouvoir thermoelectrique et une etude preliminaire a ete effectue dans les couches minces de bismuth a la temperature entre 77 et 300 K. Comme dans les travaux prealables, les Bi films sont prepares par evaporation en vacuum sur des substrats en verre a la temperature ambiante. Les resultats experimentaux obtennus montrent que des pouvoirs thermoelectrique sont insensible a la temperature. Le signe de conductivite, auquel nous avons en un interet, fut negatif pour tous echantillons
The thermoelectric power is determined directly and studied as a function of temperature for a range...
The thermoelectric power is determined directly and studied as a function of temperature for a range...
The Bismuth Telluride and the ternary derivative compounds develop optimal thermoelectric properties...
Un dispositif cryogenique a ete fabrique pour Ie mesure du pouvoir thermoelectrique et une etude pre...
Die elektrische spezifische Widershinde und Hallkoeffizienten wurden bei Temperatur von 77 bis 300 K...
The resistivity of thin bismuth films grown on sapphire substrates has been measured as a function ...
The resistivity and magnetoresistance have been measured over the temperature range from 78 to 300 ...
The resistivity and magnetoresistance have been measured over the temperature range from 78 to 300 K...
Polycrystalline bismuth films were prepared by vacuum deposition onto mica substrates held at 423 K ...
Polycrystalline bismuth films were prepared by vacuum deposition onto mica substrates held at 423 K ...
Low temperature electronic transport properties have been studied in thin bismuth films with an emph...
Thermoelectrics have a wide range of potential applications in the temperature range of 0/sup 0/ to ...
We have studied the elastoresistance of bismuth thin films by measuring the transverse gauge factor ...
In this work the effect of annealing temperature on the structure and the electrical properties of B...
The thermoelectric power is determined directly and studied as a function of temperature for a range...
The thermoelectric power is determined directly and studied as a function of temperature for a range...
The thermoelectric power is determined directly and studied as a function of temperature for a range...
The Bismuth Telluride and the ternary derivative compounds develop optimal thermoelectric properties...
Un dispositif cryogenique a ete fabrique pour Ie mesure du pouvoir thermoelectrique et une etude pre...
Die elektrische spezifische Widershinde und Hallkoeffizienten wurden bei Temperatur von 77 bis 300 K...
The resistivity of thin bismuth films grown on sapphire substrates has been measured as a function ...
The resistivity and magnetoresistance have been measured over the temperature range from 78 to 300 ...
The resistivity and magnetoresistance have been measured over the temperature range from 78 to 300 K...
Polycrystalline bismuth films were prepared by vacuum deposition onto mica substrates held at 423 K ...
Polycrystalline bismuth films were prepared by vacuum deposition onto mica substrates held at 423 K ...
Low temperature electronic transport properties have been studied in thin bismuth films with an emph...
Thermoelectrics have a wide range of potential applications in the temperature range of 0/sup 0/ to ...
We have studied the elastoresistance of bismuth thin films by measuring the transverse gauge factor ...
In this work the effect of annealing temperature on the structure and the electrical properties of B...
The thermoelectric power is determined directly and studied as a function of temperature for a range...
The thermoelectric power is determined directly and studied as a function of temperature for a range...
The thermoelectric power is determined directly and studied as a function of temperature for a range...
The Bismuth Telluride and the ternary derivative compounds develop optimal thermoelectric properties...