"Irradiation of particles such as protons and neutrons does various damages to light emitting devices. In semiconductor lasers, the most important effect is an increase in threshold current. This effect is characterized as the threshold current damage factor K_I. Dependence of K_I on incident particle energy and materials of active regions is discussed using non-ionizing energy loss (NIEL) and displacement energy. Furthermore, K_I is discussed taking account of a decrease in carrier lifetime due to non-radiative centers (defects) introduced by irradiation of particles.
A variety of commercially available LEDs, LDs, PDs, and optocouplers from two german manufacturers w...
The characteristics of materials are affected by irradiation and this has been studied by the author...
This paper reports on the degradation of two different series of commercially-available InGaN LEDs s...
Abstract- Displacement damage effects from protons and neutrons are compared. Differences in the ann...
International audienceA series of proton irradiations of GaAs/GaAlAs vertical cavity surface emittin...
Radiation damage of semiconductor components constitutes a safety risk for the functioning of circui...
International audienceNon Ionizing Energy Loss (NIEL) is the metric conventionally used to scale dis...
Abstract The effects of proton displacement damage on light-emitting diodes and laser diodes are dis...
In this fast developing era of technological advancement, semiconductor devices hold vital key due t...
Commercially available semiconductor lasers and p-i-n photodiodes from several different manufacture...
Future space mission utilize more and more optical links for internal data transmission but also for...
The electrooptical properties of industrial AL 102 GaP light-emitting diodes (LEDs) irradiated with ...
The physical phenomena associated with the stopping of energetic ions in semiconductor materials hav...
The aim of this work is to analyze the modifications created by proton irradiation on the performanc...
International audienceThe application of Non-Ionizing Energy Loss (NIEL) in estimating the impact of...
A variety of commercially available LEDs, LDs, PDs, and optocouplers from two german manufacturers w...
The characteristics of materials are affected by irradiation and this has been studied by the author...
This paper reports on the degradation of two different series of commercially-available InGaN LEDs s...
Abstract- Displacement damage effects from protons and neutrons are compared. Differences in the ann...
International audienceA series of proton irradiations of GaAs/GaAlAs vertical cavity surface emittin...
Radiation damage of semiconductor components constitutes a safety risk for the functioning of circui...
International audienceNon Ionizing Energy Loss (NIEL) is the metric conventionally used to scale dis...
Abstract The effects of proton displacement damage on light-emitting diodes and laser diodes are dis...
In this fast developing era of technological advancement, semiconductor devices hold vital key due t...
Commercially available semiconductor lasers and p-i-n photodiodes from several different manufacture...
Future space mission utilize more and more optical links for internal data transmission but also for...
The electrooptical properties of industrial AL 102 GaP light-emitting diodes (LEDs) irradiated with ...
The physical phenomena associated with the stopping of energetic ions in semiconductor materials hav...
The aim of this work is to analyze the modifications created by proton irradiation on the performanc...
International audienceThe application of Non-Ionizing Energy Loss (NIEL) in estimating the impact of...
A variety of commercially available LEDs, LDs, PDs, and optocouplers from two german manufacturers w...
The characteristics of materials are affected by irradiation and this has been studied by the author...
This paper reports on the degradation of two different series of commercially-available InGaN LEDs s...