Author name used in this publication: P. F. LeeAuthor name used in this publication: J. Y. Dai2004-2005 > Academic research: refereed > Publication in refereed journalVersion of RecordPublishe
International audienceAn attractive alternative for extending the scaling of Flash-type memories is ...
We have successfully developed a novel method to fabricate the memory structure of Ge nanocrystals e...
A method of synthesizing and controlling the size of germanium nanocrystals is developed. A tri-laye...
A floating gate memory structure utilizing Ge nanocrystals embedded in LaAlO₃ (LAO) high-k dielectri...
2004-2005 > Academic research: refereed > Publication in refereed journalVersion of RecordPublishe
xv, 140 leaves : ill. ; 31 cm.PolyU Library Call No.: [THS] LG51 .H577P AP 2007 LeeNanocrystals (NC)...
Author name used in this publication: Weili LiuAuthor name used in this publication: J. Y. DaiAuthor...
This dissertation focuses on the formation of nanocrystals and integration with high-k dielectrics t...
This dissertation focuses on the formation of nanocrystals and integration with high-k dielectrics t...
Thesis (M. Eng.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering,...
Ge nanocrystals embedded in lanthanide-based high-k dielectric (amorphous Lu2O3 in this work) were f...
Author name used in this publication: K. C. ChanAuthor name used in this publication: P. F. LeeAutho...
Metal-oxide-semiconductor (MOS) capacitors with tri-layer structure consisting of rf magnetron sputt...
Dielectric layers with embedded semiconductor nanocrystals (NCs) are widely studied, in order to ove...
A novel method of synthesizing and controlling the size of germanium nanocrystals was developed. A t...
International audienceAn attractive alternative for extending the scaling of Flash-type memories is ...
We have successfully developed a novel method to fabricate the memory structure of Ge nanocrystals e...
A method of synthesizing and controlling the size of germanium nanocrystals is developed. A tri-laye...
A floating gate memory structure utilizing Ge nanocrystals embedded in LaAlO₃ (LAO) high-k dielectri...
2004-2005 > Academic research: refereed > Publication in refereed journalVersion of RecordPublishe
xv, 140 leaves : ill. ; 31 cm.PolyU Library Call No.: [THS] LG51 .H577P AP 2007 LeeNanocrystals (NC)...
Author name used in this publication: Weili LiuAuthor name used in this publication: J. Y. DaiAuthor...
This dissertation focuses on the formation of nanocrystals and integration with high-k dielectrics t...
This dissertation focuses on the formation of nanocrystals and integration with high-k dielectrics t...
Thesis (M. Eng.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering,...
Ge nanocrystals embedded in lanthanide-based high-k dielectric (amorphous Lu2O3 in this work) were f...
Author name used in this publication: K. C. ChanAuthor name used in this publication: P. F. LeeAutho...
Metal-oxide-semiconductor (MOS) capacitors with tri-layer structure consisting of rf magnetron sputt...
Dielectric layers with embedded semiconductor nanocrystals (NCs) are widely studied, in order to ove...
A novel method of synthesizing and controlling the size of germanium nanocrystals was developed. A t...
International audienceAn attractive alternative for extending the scaling of Flash-type memories is ...
We have successfully developed a novel method to fabricate the memory structure of Ge nanocrystals e...
A method of synthesizing and controlling the size of germanium nanocrystals is developed. A tri-laye...
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