Effect of Al addition on the microstructure and electronic structure of HfO₂film

Influence of film thickness on the dielectric characteristics of hafnium oxide layers

Golosov, D. A.
Vilya, N.
Zavadski, S. М.
Melnikov, S. N.
Avramchuck, A. V.
Grekhov, М. М.
Kargin, N. I.
Komissarov, I. V.
Голосов, Д. А.
Завадский, С. М.
Мельников, С. Н.
Аврамчук, А. В.
Комиссаров, И. В.

January 2019

The present work focuses on the study of properties of hafnium oxide (HfO2) films, deposited by reac...

Soft x-ray photoemission studies of Hf oxidation

Suzer, S.
Sayan, S.
Banaszak Holl, M.M.
Garfunkel, E.
Hussain, Z.
Hamdan, N.M.

January 2003

Charging of oxide films under x rays is an important issue that must be taken into consideration for...

Effect of Al Incorporation in the Thermal Stability of Atomic-Layer-Deposited HfO2 for Gate Dielectric Applications

Yan-Kai Chiou

[[abstract]]The thermal stability in structural and electrical properties of HfO2, HfAlOx alloy, and...

Effect of Al addition on the microstructure and electronic structure of HfO\u2082 film

Wang, X.
Li, Quan
Egerton, Raymond
Lee, Peter
Dai, J.
Hou, Z.
Gong, X.

January 2007

We have investigated the microstructures and electronic structures of a series of hafnium aluminate ...

Effects of Al addition on the native defects in hafnia

Li, Q
Koo, KM
Lau, WM
Lee, PF
Dai, J
Hou, ZF
Gong, XG

December 2014

Author name used in this publication: P. F. LeeAuthor name used in this publication: J. Y. Dai2005-2...

Growth and characterization of Hf-aluminate high-k gate dielectric ultrathin films with equivalent oxide thickness less than 10 Å

Lee, PF
Dai, J
Wong, KH
Chan, HLW
Choy, CL

December 2014

Author name used in this publication: J. Y. DaiAuthor name used in this publication: K. H. WongAutho...

Reduction of electrical defects in atomic layer deposited HfO2 films by Al doping

��

July 2010

The gate leakage current density (Jg) of ultrathin (��3 nm) Al-doped HfO2 (Al:HfO2) films with an A...

Study of interfacial reaction and its impact on electric properties of Hf-Al-O high-k gate dielectric thin films grown on Si

Lee, PF
Dai, J
Wong, KH
Chan, HLW
Choy, CL

December 2014

2002-2003 > Academic research: refereed > Publication in refereed journalVersion of RecordPublishe

Dielectric constants and phonon modes of amorphous hafnium aluminate deposited by metal organic chemical vapor deposition

Bundesmann, C.
Buiu, O.
Hall, S.
Schubert, Mathias

January 2007

Dielectric constants and long-wavelength optical phonon modes of amorphous hafnium aluminate films w...

Reduced impurities and improved electrical properties of atomic-layer-deposited HfO2 film grown at a low temperature (100 degrees C) by Al2O3 incorporation

?????????

May 2016

The HfO2 films grown by atomic layer deposition (ALD) at a low temperature (100 degrees C) necessari...

Atomic layer deposition of amorphous hafnium-based thin films with enhance thermal stabilities

Wang, Tuo, 1983-

February 2011

textThe continuous scaling of microelectronic devices requires high permittivity (high-k) dielectric...

Optical band gaps and composition dependence of hafnium–aluminate thin films grown by atomic layer chemical vapor deposition

Nguyen, N. V.
Sayan, S.
Levin, Igor
Ehrstein, James R.
Baumvol, Israel Jacob Rabin
Driemeier, Carlos Eduardo
Krug, Cristiano
Wielunski, Leszek S.
Hung, Puiyee Y.
Diebold, Alain

January 2005

We report the optical properties of unannealed hafnium–aluminate HfAlO films grown by atomic layer c...

High-temperature phase stability of hafnium aluminate films for alternative gate dielectrics

Yang, Y
Zhu, W J
Ma, T P
Stemmer, Susanne

April 2004

Hafnium aluminate films with different compositions were deposited at room temperature by jet vapor ...

Annealing Study of ALD Deposited Ferroelectric Aluminum-doped Hafnium Oxide

Eschle, Joshua L

April 2018

With the acquisition of a Savannah ALD tool at RIT, it is now possible to deposit ferroelectric Al-d...

Atomic and electronic structure of amorphous and crystalline hafnium oxide: X-ray photoelectron spectroscopy and density functional calculations

T V Perevalov
V A Gritsenko
S B Erenburg
A M Badalyan
Hei Wong
C W Kim

April 2020

The atomic structure of amorphous and crystalline hafnium oxide ͑HfO 2 ͒ films was examined using x-...

Influence of film thickness on the dielectric characteristics of hafnium oxide layers

Golosov, D. A.
Vilya, N.
Zavadski, S. М.
Melnikov, S. N.
Avramchuck, A. V.
Grekhov, М. М.
Kargin, N. I.
Komissarov, I. V.
Голосов, Д. А.
Завадский, С. М.
Мельников, С. Н.
Аврамчук, А. В.
Комиссаров, И. В.

January 2019

The present work focuses on the study of properties of hafnium oxide (HfO2) films, deposited by reac...

Soft x-ray photoemission studies of Hf oxidation

Suzer, S.
Sayan, S.
Banaszak Holl, M.M.
Garfunkel, E.
Hussain, Z.
Hamdan, N.M.

January 2003

Charging of oxide films under x rays is an important issue that must be taken into consideration for...

Effect of Al Incorporation in the Thermal Stability of Atomic-Layer-Deposited HfO2 for Gate Dielectric Applications

Yan-Kai Chiou

[[abstract]]The thermal stability in structural and electrical properties of HfO2, HfAlOx alloy, and...

Effect of Al addition on the microstructure and electronic structure of HfO\u2082 film

Wang, X.
Li, Quan
Egerton, Raymond
Lee, Peter
Dai, J.
Hou, Z.
Gong, X.

January 2007

We have investigated the microstructures and electronic structures of a series of hafnium aluminate ...

Effects of Al addition on the native defects in hafnia

Li, Q
Koo, KM
Lau, WM
Lee, PF
Dai, J
Hou, ZF
Gong, XG

December 2014

Author name used in this publication: P. F. LeeAuthor name used in this publication: J. Y. Dai2005-2...

Growth and characterization of Hf-aluminate high-k gate dielectric ultrathin films with equivalent oxide thickness less than 10 Å

Lee, PF
Dai, J
Wong, KH
Chan, HLW
Choy, CL

December 2014

Author name used in this publication: J. Y. DaiAuthor name used in this publication: K. H. WongAutho...

Reduction of electrical defects in atomic layer deposited HfO2 films by Al doping

��

July 2010

The gate leakage current density (Jg) of ultrathin (��3 nm) Al-doped HfO2 (Al:HfO2) films with an A...

Study of interfacial reaction and its impact on electric properties of Hf-Al-O high-k gate dielectric thin films grown on Si

Lee, PF
Dai, J
Wong, KH
Chan, HLW
Choy, CL

December 2014

2002-2003 > Academic research: refereed > Publication in refereed journalVersion of RecordPublishe

Dielectric constants and phonon modes of amorphous hafnium aluminate deposited by metal organic chemical vapor deposition

Bundesmann, C.
Buiu, O.
Hall, S.
Schubert, Mathias

January 2007

Dielectric constants and long-wavelength optical phonon modes of amorphous hafnium aluminate films w...

Reduced impurities and improved electrical properties of atomic-layer-deposited HfO2 film grown at a low temperature (100 degrees C) by Al2O3 incorporation

?????????

May 2016

The HfO2 films grown by atomic layer deposition (ALD) at a low temperature (100 degrees C) necessari...

Atomic layer deposition of amorphous hafnium-based thin films with enhance thermal stabilities

Wang, Tuo, 1983-

February 2011

textThe continuous scaling of microelectronic devices requires high permittivity (high-k) dielectric...

Optical band gaps and composition dependence of hafnium–aluminate thin films grown by atomic layer chemical vapor deposition

Nguyen, N. V.
Sayan, S.
Levin, Igor
Ehrstein, James R.
Baumvol, Israel Jacob Rabin
Driemeier, Carlos Eduardo
Krug, Cristiano
Wielunski, Leszek S.
Hung, Puiyee Y.
Diebold, Alain

January 2005

We report the optical properties of unannealed hafnium–aluminate HfAlO films grown by atomic layer c...

High-temperature phase stability of hafnium aluminate films for alternative gate dielectrics

Yang, Y
Zhu, W J
Ma, T P
Stemmer, Susanne

April 2004

Hafnium aluminate films with different compositions were deposited at room temperature by jet vapor ...

Annealing Study of ALD Deposited Ferroelectric Aluminum-doped Hafnium Oxide

Eschle, Joshua L

April 2018

With the acquisition of a Savannah ALD tool at RIT, it is now possible to deposit ferroelectric Al-d...

Atomic and electronic structure of amorphous and crystalline hafnium oxide: X-ray photoelectron spectroscopy and density functional calculations

T V Perevalov
V A Gritsenko
S B Erenburg
A M Badalyan
Hei Wong
C W Kim

April 2020

The atomic structure of amorphous and crystalline hafnium oxide ͑HfO 2 ͒ films was examined using x-...

Influence of film thickness on the dielectric characteristics of hafnium oxide layers

Golosov, D. A.
Vilya, N.
Zavadski, S. М.
Melnikov, S. N.
Avramchuck, A. V.
Grekhov, М. М.
Kargin, N. I.
Komissarov, I. V.
Голосов, Д. А.
Завадский, С. М.
Мельников, С. Н.
Аврамчук, А. В.
Комиссаров, И. В.

January 2019

The present work focuses on the study of properties of hafnium oxide (HfO2) films, deposited by reac...

Soft x-ray photoemission studies of Hf oxidation

Suzer, S.
Sayan, S.
Banaszak Holl, M.M.
Garfunkel, E.
Hussain, Z.
Hamdan, N.M.

January 2003

Charging of oxide films under x rays is an important issue that must be taken into consideration for...

Effect of Al Incorporation in the Thermal Stability of Atomic-Layer-Deposited HfO2 for Gate Dielectric Applications

Yan-Kai Chiou

[[abstract]]The thermal stability in structural and electrical properties of HfO2, HfAlOx alloy, and...

Effect of Al addition on the microstructure and electronic structure of HfO₂film

Abstract

Extracted data

Effect of Al addition on the microstructure and electronic structure of HfO₂film

Abstract

Extracted data

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