Growth and characterization of Hf-aluminate high-k gate dielectric ultrathin films with equivalent oxide thickness less than 10 Å

Fabrication and Electrical characteristic of quaternary ultrathin HfTiErO thin films for MOS devices grown by rf sputtering

Khaskheli, Murad Ali
Wu, Ping
Soomro, Amir Mahmood
Khan, Matiullah
Ellahi, Mujetaba
., Asadullah
Kalhoro, Mohammad Siddique

May 2013

Ultra-thin Ti and Er co-doped HfO2 films were grown on Si substrate by RF sputtering at different co...

Effect of Al addition on the microstructure and electronic structure of HfO₂film

Wang, XF
Li, Q
Egerton, RF
Lee, PF
Dai, J
Hou, ZF
Gong, XG

December 2014

Author name used in this publication: P. F. LeeAuthor name used in this publication: J. Y. Dai2006-2...

Deposition, stabilization and characterization of zirconium oxide and hafnium oxide thin films for high k gate dielectrics

Gao, Yong
Gao, Yong

January 2004

As the MOS devices continue to scale down in feature size, the gate oxide thickness is approaching t...

Study of interfacial reaction and its impact on electric properties of Hf-Al-O high-k gate dielectric thin films grown on Si

Lee, PF
Dai, J
Wong, KH
Chan, HLW
Choy, CL

December 2014

2002-2003 > Academic research: refereed > Publication in refereed journalVersion of RecordPublishe

Epitaxial growth of yttrium-stabilized HfO₂ high-k gate dielectric thin films on Si

Dai, J
Lee, PF
Wong, KH
Chan, HLW
Choy, CL

December 2014

2003-2004 > Academic research: refereed > Publication in refereed journalVersion of RecordPublishe

Study of Hf-Al-O High-k Gate Dielectric Thin Films Grown on Si

Lee, P F
Dai, J Y
Chan, H L W
Choy, C L

January 2003

Ultrathin amorphous films of Hf-aluminate (Hf-Al-O) have been deposited on p-type (100) Si substrate...

Electrical properties of ultra thin Al2O3 and HfO2 films as gate dielectrics in MOS technology

Mehta, Vishal R.

August 2002

The rapidly evolving silicon industry demands devices with high-speed and low power consumption. Thi...

Investigation of Gate Dielectric Materials and Dielectric/Silicon Interfaces for Metal Oxide Semiconductor Devices

Han, Lei

January 2015

The progress of the silicon-based complementary-metal-oxide-semiconductor (CMOS) technology is mainl...

Fabrication and Characterization of High-k Al2O3 and HfO2 Capacitors

Judd, Jesse

January 2018

Thin film, high-k capacitors are processed via ALD (atomic layer deposition). At a temperature of 20...

Synthesis & characterization of ultrathin HfO₂ gate dielectrics

January 2006

Wang Lei.Thesis (M.Phil.)--Chinese University of Hong Kong, 2006.Includes bibliographical references...

Process development, material analysis, and electrical characterization of ultra thin hafnium silicate films for alternative gate dielectric application

Gopalan, Sundararaman

May 2002

textAs aggressive scaling of the Metal-Oxide-Semiconductor (MOS) integrated circuit continues, the ...

Atomic layer deposition of amorphous hafnium-based thin films with enhance thermal stabilities

Wang, Tuo, 1983-

February 2011

textThe continuous scaling of microelectronic devices requires high permittivity (high-k) dielectric...

Growth and characterization of Hf-silicate/Al2O3 gate stacks grown on Si(100) by self-limiting atomic layer deposition

Kim, J
Lee, S
Yong, K

A thin film structure of a HfSixOy/Al2O3/Si gate stack was fabricated on Si(100) by self-limiting at...

Characterization of Al2O3 and HfO2 Grown on Metal Surfaces with Thermal and Plasma Enhanced Atomic Layer Deposition

Zhou, Haiping
Fu, Yen-Chun
Mirza, Muhammad

July 2017

Atomic layer deposition (ALD) is potentially a very suitable deposition technology to grow ultra thi...

Reliability study of Zr and Al incorporated hf based high-k dielectric deposited by advanced processing

Bhuyian, Md Nasir Uddin

January 2015

Hafnium-based high-x dielectric materials have been successfully used in the industry as a key repla...

Fabrication and Electrical characteristic of quaternary ultrathin HfTiErO thin films for MOS devices grown by rf sputtering

Khaskheli, Murad Ali
Wu, Ping
Soomro, Amir Mahmood
Khan, Matiullah
Ellahi, Mujetaba
., Asadullah
Kalhoro, Mohammad Siddique

May 2013

Ultra-thin Ti and Er co-doped HfO2 films were grown on Si substrate by RF sputtering at different co...

Effect of Al addition on the microstructure and electronic structure of HfO₂film

Wang, XF
Li, Q
Egerton, RF
Lee, PF
Dai, J
Hou, ZF
Gong, XG

December 2014

Author name used in this publication: P. F. LeeAuthor name used in this publication: J. Y. Dai2006-2...

Deposition, stabilization and characterization of zirconium oxide and hafnium oxide thin films for high k gate dielectrics

Gao, Yong
Gao, Yong

January 2004

As the MOS devices continue to scale down in feature size, the gate oxide thickness is approaching t...

Study of interfacial reaction and its impact on electric properties of Hf-Al-O high-k gate dielectric thin films grown on Si

Lee, PF
Dai, J
Wong, KH
Chan, HLW
Choy, CL

December 2014

2002-2003 > Academic research: refereed > Publication in refereed journalVersion of RecordPublishe

Epitaxial growth of yttrium-stabilized HfO₂ high-k gate dielectric thin films on Si

Dai, J
Lee, PF
Wong, KH
Chan, HLW
Choy, CL

December 2014

2003-2004 > Academic research: refereed > Publication in refereed journalVersion of RecordPublishe

Study of Hf-Al-O High-k Gate Dielectric Thin Films Grown on Si

Lee, P F
Dai, J Y
Chan, H L W
Choy, C L

January 2003

Ultrathin amorphous films of Hf-aluminate (Hf-Al-O) have been deposited on p-type (100) Si substrate...

Electrical properties of ultra thin Al2O3 and HfO2 films as gate dielectrics in MOS technology

Mehta, Vishal R.

August 2002

The rapidly evolving silicon industry demands devices with high-speed and low power consumption. Thi...

Investigation of Gate Dielectric Materials and Dielectric/Silicon Interfaces for Metal Oxide Semiconductor Devices

Han, Lei

January 2015

The progress of the silicon-based complementary-metal-oxide-semiconductor (CMOS) technology is mainl...

Fabrication and Characterization of High-k Al2O3 and HfO2 Capacitors

Judd, Jesse

January 2018

Thin film, high-k capacitors are processed via ALD (atomic layer deposition). At a temperature of 20...

Synthesis & characterization of ultrathin HfO₂ gate dielectrics

January 2006

Wang Lei.Thesis (M.Phil.)--Chinese University of Hong Kong, 2006.Includes bibliographical references...

Process development, material analysis, and electrical characterization of ultra thin hafnium silicate films for alternative gate dielectric application

Gopalan, Sundararaman

May 2002

textAs aggressive scaling of the Metal-Oxide-Semiconductor (MOS) integrated circuit continues, the ...

Atomic layer deposition of amorphous hafnium-based thin films with enhance thermal stabilities

Wang, Tuo, 1983-

February 2011

textThe continuous scaling of microelectronic devices requires high permittivity (high-k) dielectric...

Growth and characterization of Hf-silicate/Al2O3 gate stacks grown on Si(100) by self-limiting atomic layer deposition

Kim, J
Lee, S
Yong, K

A thin film structure of a HfSixOy/Al2O3/Si gate stack was fabricated on Si(100) by self-limiting at...

Characterization of Al2O3 and HfO2 Grown on Metal Surfaces with Thermal and Plasma Enhanced Atomic Layer Deposition

Zhou, Haiping
Fu, Yen-Chun
Mirza, Muhammad

July 2017

Atomic layer deposition (ALD) is potentially a very suitable deposition technology to grow ultra thi...

Reliability study of Zr and Al incorporated hf based high-k dielectric deposited by advanced processing

Bhuyian, Md Nasir Uddin

January 2015

Hafnium-based high-x dielectric materials have been successfully used in the industry as a key repla...

Fabrication and Electrical characteristic of quaternary ultrathin HfTiErO thin films for MOS devices grown by rf sputtering

Khaskheli, Murad Ali
Wu, Ping
Soomro, Amir Mahmood
Khan, Matiullah
Ellahi, Mujetaba
., Asadullah
Kalhoro, Mohammad Siddique

May 2013

Ultra-thin Ti and Er co-doped HfO2 films were grown on Si substrate by RF sputtering at different co...

Effect of Al addition on the microstructure and electronic structure of HfO₂film

Wang, XF
Li, Q
Egerton, RF
Lee, PF
Dai, J
Hou, ZF
Gong, XG

December 2014

Author name used in this publication: P. F. LeeAuthor name used in this publication: J. Y. Dai2006-2...

Deposition, stabilization and characterization of zirconium oxide and hafnium oxide thin films for high k gate dielectrics

Gao, Yong
Gao, Yong

January 2004

As the MOS devices continue to scale down in feature size, the gate oxide thickness is approaching t...

Growth and characterization of Hf-aluminate high-k gate dielectric ultrathin films with equivalent oxide thickness less than 10 Å

Abstract

Extracted data

Growth and characterization of Hf-aluminate high-k gate dielectric ultrathin films with equivalent oxide thickness less than 10 Å

Abstract

Extracted data

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