Medium energy ion implantation of Germanium into heated <111> Silicon

Due to the character of the original source materials and the nature of batch digitization, quality control issues may be present in this document. Please report any quality issues you encounter to digital@library.tamu.edu, referencing the URI of the item.Includes bibliographical references.Medium energy ion implantation of Ge into heated Si was investigated. legh fluence implants of Ge were made at energies of 40 or 60 keV into Si substrates at room temperature or heated to 300'C or higher. Several implants were made per sample to assure uniformity of material and conditions affecting implant analysis. After implanting, all samples were annealed in an N2 atmosphere at IOOOOC for IO minutes, analyzed and annealed again at II OOOC for IO minutes followed by another analysis. Sample analysis was conducted using Rutherford Backscattering Spectroscopy (RBS) to determine the relative level of post implant, pre anneal and post anneal residual damage in the Ge implant. Results indicate significant recovery of damage for peak implanted Ge concentrations below 6% after a IIOO'C, 10 minute anneal. Some improvement was noted for implant concentrations above 6%, but substantial damage remained