WOx films were prepared by reactive dc magnetron sputtering using tungsten target. Sputtering was carried out at a total pressure of 1.2 Pa using a mixture of argon plus oxygen in an effort to determine the influence of the oxygen partial pressure on structural and optical properties of the films. The deposition rate decreases significantly as the surface of the target is oxidized. X-Ray diffraction revealed the amorphous nature of all the films prepared at oxygen partial pressures higher than 1.71×103 Pa. For higher oxygen partial pressures, fully transparent films were deposited, which showed a slight increase in optical band gap with increasing oxygen partial pressure, while the refractive index was simultaneously decreased
International audienceThe DC reactive magnetron sputtering of a metallic tungsten target was perform...
The effects of deposition conditions, including substrate temperature and sputtering gas pressure, o...
Tungsten disulfide (WS2) and tungsten oxysulfide (WOySz) thin films were prepared by reactive radio ...
International audienceTungsten oxide thin films were grown on different substrates by the convention...
International audienceTungsten oxide thin films were prepared by DC magnetron sputtering. The reacti...
Tungsten oxide coatings were deposited without substrate bias by DC reactive magnetron sputtering of...
Thin films of tungsten oxide were deposited onto silicon substrates using reactive rf sputtering. Th...
Thin films of tungsten oxynitride were prepared by dual magnetron sputtering of tungsten using argo...
Tungsten oxide thin films have applications in various energy-related devices owing to their versati...
AbstractTungsten oxide films (WO3) were deposited on ITO/glass substrates with tungsten target in UH...
Tungsten oxide (WO3) thin films were deposited both on silicon, soda-lime glass and W foils by Ar/O2...
Thin films of tungsten oxynitride were prepared by dual magnetron sputtering of tungsten using argon...
Tungsten oxide (WOx) thin films were synthesized through the RF magnetron sputtering method by varyi...
Tungsten oxynitride films (W-O-N) were prepared by DC reactive magnetron sputtering in a wide range ...
International audienceTungsten oxide films are deposited onto glass and silicon substrates using rea...
International audienceThe DC reactive magnetron sputtering of a metallic tungsten target was perform...
The effects of deposition conditions, including substrate temperature and sputtering gas pressure, o...
Tungsten disulfide (WS2) and tungsten oxysulfide (WOySz) thin films were prepared by reactive radio ...
International audienceTungsten oxide thin films were grown on different substrates by the convention...
International audienceTungsten oxide thin films were prepared by DC magnetron sputtering. The reacti...
Tungsten oxide coatings were deposited without substrate bias by DC reactive magnetron sputtering of...
Thin films of tungsten oxide were deposited onto silicon substrates using reactive rf sputtering. Th...
Thin films of tungsten oxynitride were prepared by dual magnetron sputtering of tungsten using argo...
Tungsten oxide thin films have applications in various energy-related devices owing to their versati...
AbstractTungsten oxide films (WO3) were deposited on ITO/glass substrates with tungsten target in UH...
Tungsten oxide (WO3) thin films were deposited both on silicon, soda-lime glass and W foils by Ar/O2...
Thin films of tungsten oxynitride were prepared by dual magnetron sputtering of tungsten using argon...
Tungsten oxide (WOx) thin films were synthesized through the RF magnetron sputtering method by varyi...
Tungsten oxynitride films (W-O-N) were prepared by DC reactive magnetron sputtering in a wide range ...
International audienceTungsten oxide films are deposited onto glass and silicon substrates using rea...
International audienceThe DC reactive magnetron sputtering of a metallic tungsten target was perform...
The effects of deposition conditions, including substrate temperature and sputtering gas pressure, o...
Tungsten disulfide (WS2) and tungsten oxysulfide (WOySz) thin films were prepared by reactive radio ...