The transition-metal dichalcogenide 1T-TiSe2 is a quasi-two-dimensional layered material with a charge density wave (CDW) transition temperature of TCDW ≈ 200 K. Self-doping effects for crystals grown at different temperatures introduce structural defects, modify the temperature-dependent resistivity, and strongly perturbate the CDW phase. Here, we study the structural and doping nature of such native defects combining scanning tunneling microscopy or spectroscopy and ab initio calculations. The dominant native single atom dopants we identify in our single crystals are intercalated Ti atoms, Se vacancies, and Se substitutions by residual iodine and oxygen
Two‐dimensional (2D) metallic transition‐metal dichalcogenides (TMDCs), such as 1T‐TiSe$_2$, have re...
The transition metal dichalcogenide 1T-TiSe2-two-dimensional layered material undergoing a commensur...
Single-layer TiSe2 is a small-gap semiconductor of interest for two-dimensional electronic applicati...
The transition-metal dichalcogenide 1T-TiSe2 is a quasi-two-dimensional layered material with a char...
The transition-metal dichalcogenide 1T-TiSe2 is a quasi-two-dimensional layered material with a char...
The transition-metal dichalcogenide 1T−TiSe₂is a quasi-two-dimensional layered material with a charg...
We present a detailed low-temperature scanning tunneling microscopy (STM) study of the commensurate ...
We present a detailed low-temperature scanning tunneling microscopy (STM) study of the commensurate ...
In Ti-intercalated self-doped 1T−TiSe2 crystals, the charge density wave (CDW) superstructure induc...
The interplay between charge order and superconductivity has been a long standing puzzle in a wide r...
In Ti-intercalated self-doped 1T-TiSe2 crystals, the charge density wave (CDW) superstructure induce...
The transition metal dichalcogenide 1T−TiSe2-two-dimensional layered material undergoing a commensu...
Resumen del póster presentado al 1st Workshop Spain-Taiwan: "2D Materials and Interfaces for Spintro...
TiS2 has been intensively studied as an electrode material and a thermoelectric material for energy ...
We present a density functional theory study of the electronic structure of single-layer TiSe, and f...
Two‐dimensional (2D) metallic transition‐metal dichalcogenides (TMDCs), such as 1T‐TiSe$_2$, have re...
The transition metal dichalcogenide 1T-TiSe2-two-dimensional layered material undergoing a commensur...
Single-layer TiSe2 is a small-gap semiconductor of interest for two-dimensional electronic applicati...
The transition-metal dichalcogenide 1T-TiSe2 is a quasi-two-dimensional layered material with a char...
The transition-metal dichalcogenide 1T-TiSe2 is a quasi-two-dimensional layered material with a char...
The transition-metal dichalcogenide 1T−TiSe₂is a quasi-two-dimensional layered material with a charg...
We present a detailed low-temperature scanning tunneling microscopy (STM) study of the commensurate ...
We present a detailed low-temperature scanning tunneling microscopy (STM) study of the commensurate ...
In Ti-intercalated self-doped 1T−TiSe2 crystals, the charge density wave (CDW) superstructure induc...
The interplay between charge order and superconductivity has been a long standing puzzle in a wide r...
In Ti-intercalated self-doped 1T-TiSe2 crystals, the charge density wave (CDW) superstructure induce...
The transition metal dichalcogenide 1T−TiSe2-two-dimensional layered material undergoing a commensu...
Resumen del póster presentado al 1st Workshop Spain-Taiwan: "2D Materials and Interfaces for Spintro...
TiS2 has been intensively studied as an electrode material and a thermoelectric material for energy ...
We present a density functional theory study of the electronic structure of single-layer TiSe, and f...
Two‐dimensional (2D) metallic transition‐metal dichalcogenides (TMDCs), such as 1T‐TiSe$_2$, have re...
The transition metal dichalcogenide 1T-TiSe2-two-dimensional layered material undergoing a commensur...
Single-layer TiSe2 is a small-gap semiconductor of interest for two-dimensional electronic applicati...