We examine the influence of collective excitations on the transport properties (resistivity and magneto-optical conductivity) for semimetals, focusing on the case of bismuth. We show, using a random-phase approximation (RPA), that the properties of the system are drastically affected by the presence of an acoustic-plasmon mode, which is a consequence of the presence of two types of carriers (electrons and holes) in this system. We find a crossover temperature T∗ separating two different regimes of transport. At high temperatures where T>T∗, we show that Baber scattering explains quantitatively the dc resistivity experiments, while at low temperatures where T<T∗, the interactions of the carriers with this collective mode lead to a T5 behavio...
Grain structure and the temperature dependences of resistivity, magnetoresistance, Hall and Seebeck ...
Along the twentieth century, the electronic properties of bismuth have been widely studied, especial...
Measurements of the thermal conductivity, thermoelectric power, and electrical resistivity of arseni...
We report low-temperature transport experiments on atomic-size contacts of bismuth that are fabricat...
The application of pressure to elemental bismuth reduces its conduction-valence band overlap, and re...
We present a transport study of semi-metallic bismuth in the presence of a magnetic field applied al...
Using diagrammatic methods we derive an effective interaction between a low energy collective moveme...
The group V semimetals are first introduced by comparing their particular band structure with the mo...
Low temperature electronic transport properties have been studied in thin bismuth films with an emph...
Low-temperature transport measurements are reported for pure bismuth and for bismuth doped with equa...
We present detailed mean-field and random-phase-approximation studies of the negative-U, extended Hu...
Abstract-Transport theory based on the relaxation time formalism has been applied to bismuth; the re...
We studied the quantum oscillatory phenomena which were observed at 1.2~4.2°K in the de Haas-van Alp...
We present an extensive study of angle-dependent transverse magnetoresistance in bismuth, with a mag...
Bismuth Fermi surface is composed of one parabolic hole pocket and three equivalent Dirac electrons ...
Grain structure and the temperature dependences of resistivity, magnetoresistance, Hall and Seebeck ...
Along the twentieth century, the electronic properties of bismuth have been widely studied, especial...
Measurements of the thermal conductivity, thermoelectric power, and electrical resistivity of arseni...
We report low-temperature transport experiments on atomic-size contacts of bismuth that are fabricat...
The application of pressure to elemental bismuth reduces its conduction-valence band overlap, and re...
We present a transport study of semi-metallic bismuth in the presence of a magnetic field applied al...
Using diagrammatic methods we derive an effective interaction between a low energy collective moveme...
The group V semimetals are first introduced by comparing their particular band structure with the mo...
Low temperature electronic transport properties have been studied in thin bismuth films with an emph...
Low-temperature transport measurements are reported for pure bismuth and for bismuth doped with equa...
We present detailed mean-field and random-phase-approximation studies of the negative-U, extended Hu...
Abstract-Transport theory based on the relaxation time formalism has been applied to bismuth; the re...
We studied the quantum oscillatory phenomena which were observed at 1.2~4.2°K in the de Haas-van Alp...
We present an extensive study of angle-dependent transverse magnetoresistance in bismuth, with a mag...
Bismuth Fermi surface is composed of one parabolic hole pocket and three equivalent Dirac electrons ...
Grain structure and the temperature dependences of resistivity, magnetoresistance, Hall and Seebeck ...
Along the twentieth century, the electronic properties of bismuth have been widely studied, especial...
Measurements of the thermal conductivity, thermoelectric power, and electrical resistivity of arseni...