High-temperature spectral hole burning on Sm-doped single crystal materials of PbFCl family

Jaaniso, Raivo
Bill, Hans

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Publication date

January 1995

DOI

10.1016/0022-2313(95)00038-R

Publisher

Elsevier BV

ISSN

0022-2313

Abstract

Basic properties relevant to spectral hole burning (homogeneous and inhomogeneous spectral broadening, hole burning and filling mechanisms) are investigated in MeIyMeII1 − yFXIxXII1 − x: Sm2+ (Me = Ca,Sr,Ba; X = Cl,Br,I) single crystals. The relations between the spectral characteristics of 5D0,1-7F0 transitions and the material structure are described. Hole stability is investigated up to 430 K and is shown to be determined by ionic diffusion

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High-temperature spectral hole burning on Sm-doped single crystal materials of PbFCl family

Abstract

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High-temperature spectral hole burning on Sm-doped single crystal materials of PbFCl family

Abstract

Extracted data

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