The giant piezoresistance (PZR) previously reported in silicon nanowires is experimentally investigated in a large number of depleted silicon nano- and microstructures. The resistance is shown to vary strongly with time due to electron and hole trapping at the sample surfaces independent of the applied stress. Importantly, this time-varying resistance manifests itself as an apparent giant PZR identical to that reported elsewhere. By modulating the applied stress in time, the true PZR of the structures is found to be comparable with that of bulk silicon
International audienceThe steady-state, space-charge-limited piezoresistance (PZR) of defect-enginee...
International audienceThe steady-state, space-charge-limited piezoresistance (PZR) of defect-enginee...
Metal-semiconductor hybrids are artificially created structures presenting novel properties not exhi...
A wide variety of apparently contradictory piezoresistance (PZR) behaviors have been reported in p-t...
Silicon nanowires (SiNWs) have received attention in recent years due to their anomalous piezoresist...
International audiencePiezoresistance (PZR) in nano-silicon has long promised to provide a ...
International audiencePiezoresistance (PZR) in nano-silicon has long promised to provide a ...
Herein we demonstrate giant piezoresistance in silicon nanowires (NWs) by the modulation of an elect...
The anomalous piezoresistance (a-PZR) effects, including giant PZR (GPZR) with large magnitude and i...
Top-down fabrication and electrical characterization of undoped p-type silicon nanowires with and wi...
International audienceA giant, anomalous piezoresponse of fully depleted silicon-on-insulator device...
International audienceA giant, anomalous piezoresponse of fully depleted silicon-on-insulator device...
Although the various effects of strain on silicon are subject of intensive research since the 1950s ...
International audienceThe steady-state, space-charge-limited piezoresistance (PZR) of defect-enginee...
International audienceThe steady-state, space-charge-limited piezoresistance (PZR) of defect-enginee...
International audienceThe steady-state, space-charge-limited piezoresistance (PZR) of defect-enginee...
International audienceThe steady-state, space-charge-limited piezoresistance (PZR) of defect-enginee...
Metal-semiconductor hybrids are artificially created structures presenting novel properties not exhi...
A wide variety of apparently contradictory piezoresistance (PZR) behaviors have been reported in p-t...
Silicon nanowires (SiNWs) have received attention in recent years due to their anomalous piezoresist...
International audiencePiezoresistance (PZR) in nano-silicon has long promised to provide a ...
International audiencePiezoresistance (PZR) in nano-silicon has long promised to provide a ...
Herein we demonstrate giant piezoresistance in silicon nanowires (NWs) by the modulation of an elect...
The anomalous piezoresistance (a-PZR) effects, including giant PZR (GPZR) with large magnitude and i...
Top-down fabrication and electrical characterization of undoped p-type silicon nanowires with and wi...
International audienceA giant, anomalous piezoresponse of fully depleted silicon-on-insulator device...
International audienceA giant, anomalous piezoresponse of fully depleted silicon-on-insulator device...
Although the various effects of strain on silicon are subject of intensive research since the 1950s ...
International audienceThe steady-state, space-charge-limited piezoresistance (PZR) of defect-enginee...
International audienceThe steady-state, space-charge-limited piezoresistance (PZR) of defect-enginee...
International audienceThe steady-state, space-charge-limited piezoresistance (PZR) of defect-enginee...
International audienceThe steady-state, space-charge-limited piezoresistance (PZR) of defect-enginee...
Metal-semiconductor hybrids are artificially created structures presenting novel properties not exhi...