In this paper, threats and opportunities in testing of megawatt power electronic modules under short circuit are presented and discussed, together with the introduction of some basic principles of non-destructive testing, a key technique to allow post-failure analysis. The non-destructive testing equipment at CORPE, center of reliable power electronics, Aalborg University, Denmark, is presented and its features are discussed in detail, together with some relevant results. Limitations of experimental analysis have also been addressed, together with the introduction of a mixed thermal-electrical simulation tool originally developed to study abnormal conditions and helping to predict very fast and dangerous thermal transient especially in case...
Active power cycling is a standardized and well-established method for reliability assessment and pr...
Modern society is in quest of more electric power in various sectors. The rising power demand has dr...
The behavior of silicon carbide (SiC) power MOSFETs under stressful short-circuit (SC) conditions is...
In this paper, threats and opportunities in testing of megawatt power electronic modules under short...
This paper describes the design and development of a 6 kA/1.1 kV non-destructive testing system, whi...
The behavior of Silicon Carbide Power MOSFETs under stressful short circuit conditions is investigat...
This paper describes a methodology that enables fast and reasonably accurate prediction of the relia...
This paper presents a comprehensive investigation on the short circuit capability of wind-turbine-sc...
Power electronics become more and more important for modern society, which depends increasingly on t...
This paper proposes a thorough experimental characterization of the performance of commercially avai...
This paper is concerned with design of a new general PWM method dedicated for multiphase converters....
Power electronic modules distinguish themselves from other modules by their high power operation. Th...
International audienceThis paper deals with an overview of Silicon Carbide MOSFET-based power module...
International audienceThe purpose of this paper is to present an extensive study of three 1200 V sil...
The purpose of the thesis report is analyze the reliability of power electronics for heavy hybrid ve...
Active power cycling is a standardized and well-established method for reliability assessment and pr...
Modern society is in quest of more electric power in various sectors. The rising power demand has dr...
The behavior of silicon carbide (SiC) power MOSFETs under stressful short-circuit (SC) conditions is...
In this paper, threats and opportunities in testing of megawatt power electronic modules under short...
This paper describes the design and development of a 6 kA/1.1 kV non-destructive testing system, whi...
The behavior of Silicon Carbide Power MOSFETs under stressful short circuit conditions is investigat...
This paper describes a methodology that enables fast and reasonably accurate prediction of the relia...
This paper presents a comprehensive investigation on the short circuit capability of wind-turbine-sc...
Power electronics become more and more important for modern society, which depends increasingly on t...
This paper proposes a thorough experimental characterization of the performance of commercially avai...
This paper is concerned with design of a new general PWM method dedicated for multiphase converters....
Power electronic modules distinguish themselves from other modules by their high power operation. Th...
International audienceThis paper deals with an overview of Silicon Carbide MOSFET-based power module...
International audienceThe purpose of this paper is to present an extensive study of three 1200 V sil...
The purpose of the thesis report is analyze the reliability of power electronics for heavy hybrid ve...
Active power cycling is a standardized and well-established method for reliability assessment and pr...
Modern society is in quest of more electric power in various sectors. The rising power demand has dr...
The behavior of silicon carbide (SiC) power MOSFETs under stressful short-circuit (SC) conditions is...