The conventional method uses the stoichiometric mixture of metallic oxides to synthesize polycrystalline SrTiO3. The SrTiO3 was prepared by spin coating to fabricate Metal-Insulator-Matel (MIM) aluminum-SrTiO3 film-aluminum. The cubic structure of the prepared thin film of SrTiO3 was confirmed by X-ray diffraction analysis. Strontium Titanate was deposited on silicon substrates. Studying the effect of the film thickness on the structural and electrical properties. The surface morphology of deposited thin films was studied using a scanning electron microscope. Electrical properties for SrTiO3 films at constant frequency were measured. The electrical conductivity decreases with increasing thickness. The behavior of (capacitance- Frequency) at...
This thesis presents the effect of certain process conditions in the overall performance of SrTiO3 ...
[[abstract]]The effect of Ta2O5 doping on electrical characteristics of SrTiO3 (STO) metal-insulator...
The thin film capacitors were formed on silicon. The capacitor is based on the strontium titanate mu...
Thin films of SrTiO3 (STO) were formed on p-type Si(100) substrates using rf magnetron sputtering at...
Metal-insulator-metal (MIM) capacitors comprised of amorphous Si:SrTiO3-Al2O3-Si:SrTiO3 multi-dielec...
Polycrystalline SrTiO3 thin films having perovskite structure were prepared by the metallo-organ...
Metal-insulator-metal (MIM) capacitors comprised of amorphous Si:SrTiO3-Al2O3-Si:SrTiO3 multi-dielec...
Polycrystalline SrTiO3 thin films having a cubic perovskite structure were prepared at different tem...
In a view of miniaturization in microelectronics and more particularly in the sector of mobile phone...
In a view of miniaturization in microelectronics and more particularly in the sector of mobile phone...
© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. Metal-insulator-metal capacitors (MIMCAP) with s...
SrTiO3 thin films were prepared by the polymeric precursor method and deposited by spin-coating onto...
SrTiO3 thin films were prepared by the polymeric precursor method and deposited by spin-coating onto...
Abstract—TaN/SrTiO3/TaN capacitors with a capacitance density of 28–35 fF/µm2 have been developed by...
Using sputter deposition, nonepitaxial ultrathin film capacitors consisting of SrRuO3 electrodes and...
This thesis presents the effect of certain process conditions in the overall performance of SrTiO3 ...
[[abstract]]The effect of Ta2O5 doping on electrical characteristics of SrTiO3 (STO) metal-insulator...
The thin film capacitors were formed on silicon. The capacitor is based on the strontium titanate mu...
Thin films of SrTiO3 (STO) were formed on p-type Si(100) substrates using rf magnetron sputtering at...
Metal-insulator-metal (MIM) capacitors comprised of amorphous Si:SrTiO3-Al2O3-Si:SrTiO3 multi-dielec...
Polycrystalline SrTiO3 thin films having perovskite structure were prepared by the metallo-organ...
Metal-insulator-metal (MIM) capacitors comprised of amorphous Si:SrTiO3-Al2O3-Si:SrTiO3 multi-dielec...
Polycrystalline SrTiO3 thin films having a cubic perovskite structure were prepared at different tem...
In a view of miniaturization in microelectronics and more particularly in the sector of mobile phone...
In a view of miniaturization in microelectronics and more particularly in the sector of mobile phone...
© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. Metal-insulator-metal capacitors (MIMCAP) with s...
SrTiO3 thin films were prepared by the polymeric precursor method and deposited by spin-coating onto...
SrTiO3 thin films were prepared by the polymeric precursor method and deposited by spin-coating onto...
Abstract—TaN/SrTiO3/TaN capacitors with a capacitance density of 28–35 fF/µm2 have been developed by...
Using sputter deposition, nonepitaxial ultrathin film capacitors consisting of SrRuO3 electrodes and...
This thesis presents the effect of certain process conditions in the overall performance of SrTiO3 ...
[[abstract]]The effect of Ta2O5 doping on electrical characteristics of SrTiO3 (STO) metal-insulator...
The thin film capacitors were formed on silicon. The capacitor is based on the strontium titanate mu...