We present an experimental and theoretical study of the carrier capture time into a semiconductor quantum well. The carrier capture time was obtained by measuring both the rise of the quantum well population using time-resolved luminescence measurements and the decay of the barrier population using pump-probe correlation experiments. In the first technique we compare the QW rise times after direct (below the barrier band gap) and indirect (above the barrier band gap) excitation, in order to eliminate the effects of relaxation and exciton formation in the quantum well. We report the first experimental observation of oscillations in the carrier capture time between 3 and 20 ps as a function of quantum well thickness, obtained from both techni...
Recently, research for semiconductor lasers has proceeded in two directions. One direction is toward...
The carrier capture into ultrathin InAs layers embedded in a GaAs matrix has been investigated by ti...
We have investigated the carrier capture mechanism in quantum well lasers and its relevance for devi...
The authors present an exptl. and theor. study of the carrier capture time into a semiconductor quan...
We present an experimental and theoretical study of the carrier capture time into a semiconductor qu...
We experimentally observed an oscillating carrier capture time as a function of quantum well thickne...
We present an experimental and theoretical study of the carrier capture time into a semiconductor qu...
We present an experimental and theoretical study of the carrier capture time into a semiconductor qu...
We present an experimental and theoretical study of the carrier capture time into a semiconductor qu...
An experimental and theoretical study of the carrier capture time into a semiconductor quantum well ...
The carrier capture in a separate confinement heterostructure quantum well has been studied both exp...
We report on an experimental study, using continuous-wave and time-resolved photoluminescence spectr...
Contains fulltext : 14356.pdf (publisher's version ) (Open Access)59-6
Recently, research for semiconductor lasers has proceeded in two directions. One direction is toward...
The carrier capture into ultrathin InAs layers embedded in a GaAs matrix has been investigated by ti...
We have investigated the carrier capture mechanism in quantum well lasers and its relevance for devi...
The authors present an exptl. and theor. study of the carrier capture time into a semiconductor quan...
We present an experimental and theoretical study of the carrier capture time into a semiconductor qu...
We experimentally observed an oscillating carrier capture time as a function of quantum well thickne...
We present an experimental and theoretical study of the carrier capture time into a semiconductor qu...
We present an experimental and theoretical study of the carrier capture time into a semiconductor qu...
We present an experimental and theoretical study of the carrier capture time into a semiconductor qu...
An experimental and theoretical study of the carrier capture time into a semiconductor quantum well ...
The carrier capture in a separate confinement heterostructure quantum well has been studied both exp...
We report on an experimental study, using continuous-wave and time-resolved photoluminescence spectr...
Contains fulltext : 14356.pdf (publisher's version ) (Open Access)59-6
Recently, research for semiconductor lasers has proceeded in two directions. One direction is toward...
The carrier capture into ultrathin InAs layers embedded in a GaAs matrix has been investigated by ti...
We have investigated the carrier capture mechanism in quantum well lasers and its relevance for devi...