This work reports an experimental investigation of Large Scale Excitation (LSE) in sensing applications. This technique aims at mitigating flicker noise by suppressing its originating, signal-dependent, phenomena. Differently from modulation/chopping, which is not effective in these situations (flicker noise is modulated just as the signal is), LSE aims at switching on/off the source of signal generation without leaving enough time for carrier trapping or mobility changing, so blocking random telegraph noise phenomena which build up 1/f noise. As 1/f noise appears both in transistors and thin-film resistors, which are both key elements in the front-end of various sensors types, this work, after providing a simplified model for the scenario,...
Low-frequency noise in small-area MOSFETs is dominated by random telegraph signal noise associated t...
A measurement technique [1] is presented that allows measurement of MOSFET low frequency (LF) noise ...
Formula for calculating intrinsic noises of electronic elements in a wide frequencies range starting...
MOSFETs are notorious for having strong low frequency noise (1/f noise or flicker noise). In the lat...
We present a new methodology to discriminate random telegraph noise (RTN) and flicker (1/f) noise co...
This paper introduces large signal excitation measurement techniques to analyze Random Telegraph Sig...
A new measurement technique is presented that allows measurement of MOSFET LF noise under large sign...
Regarding LF noise in MOSFETs, it is noted that the MOSFET is a surface\ud channel device. Both n an...
A new measurement technique is presented that allows measurement of MOSFET LF noise under large sign...
In the study of LF noise in MOSFETS, it has become clear that Random Telegraph Signals (RTS) are dom...
The impact of substrate bias on random telegraph signal (RTS) and flicker noise in MOSFETs operating...
Abstract — In the study of LF noise in MOSFETS, it has become clear that Random Telegraph Signals (R...
Nowadays MOS device sizes and signal levels are aggressively scaled down, the low-frequency noise (L...
Abstract—A measurement technique [1] is presented that allows measurement of MOSFET low frequency (L...
International audienceRadiation induced soft errors are a serious concern not only for memories but ...
Low-frequency noise in small-area MOSFETs is dominated by random telegraph signal noise associated t...
A measurement technique [1] is presented that allows measurement of MOSFET low frequency (LF) noise ...
Formula for calculating intrinsic noises of electronic elements in a wide frequencies range starting...
MOSFETs are notorious for having strong low frequency noise (1/f noise or flicker noise). In the lat...
We present a new methodology to discriminate random telegraph noise (RTN) and flicker (1/f) noise co...
This paper introduces large signal excitation measurement techniques to analyze Random Telegraph Sig...
A new measurement technique is presented that allows measurement of MOSFET LF noise under large sign...
Regarding LF noise in MOSFETs, it is noted that the MOSFET is a surface\ud channel device. Both n an...
A new measurement technique is presented that allows measurement of MOSFET LF noise under large sign...
In the study of LF noise in MOSFETS, it has become clear that Random Telegraph Signals (RTS) are dom...
The impact of substrate bias on random telegraph signal (RTS) and flicker noise in MOSFETs operating...
Abstract — In the study of LF noise in MOSFETS, it has become clear that Random Telegraph Signals (R...
Nowadays MOS device sizes and signal levels are aggressively scaled down, the low-frequency noise (L...
Abstract—A measurement technique [1] is presented that allows measurement of MOSFET low frequency (L...
International audienceRadiation induced soft errors are a serious concern not only for memories but ...
Low-frequency noise in small-area MOSFETs is dominated by random telegraph signal noise associated t...
A measurement technique [1] is presented that allows measurement of MOSFET low frequency (LF) noise ...
Formula for calculating intrinsic noises of electronic elements in a wide frequencies range starting...