We report on the implementation of a GaAs-based, vertically emitting electrically pumped polariton laser operated at cryogenic temperatures. The structure consists of a high quality factor AlGaAs/AlAs microcavity (Q=15 000) with two stacks of four GaAs quantum wells and features a Rabi splitting of 11 meV. Polariton lasing manifests by a clear threshold in the input–output characteristics of our device with a sharp drop in the emission linewidth and a continuous blueshift of 0.7 meV above threshold with increasing injection current. We measure spatial and temporal coherence of our device in the condensed phase by utilizing interference spectroscopy. Our results clearly demonstrate that electrically driven polariton lasers have promise as mo...
High-reflectance gratings promise new generations of vertical-cavity lasers that allow flexible cont...
The authors report on room temperature (RT) lasing action in two different types of nitride-based mi...
We study experimentally the lasing regime of a GaAs based microcavity sample under strong optical pu...
We report on the implementation of a GaAs-based, vertically emitting electrically pumped polariton l...
We report on the condensation of microcavity exciton polaritons under optical excitation in a microc...
Polariton lasing under electrical pumping is observed in a GaAs multi-quantum-well microcavity diode...
Despite their name polariton lasers do not rely on stimulated emission of cavity photons. The less s...
Semiconductor microcavities (MCs) offer a unique system for producing novel types of low threshold l...
We report on a systematic study of the phase transitions to polariton condensation (PC) and further ...
We introduce an electrically driven scheme to tune the polariton condensate energy in a high-finesse...
We report a systematic study of the temperature and excitation density behavior of an AlAs/AlGaAs, v...
Polariton lasing is demonstrated on the zero-dimensional states of single GaAs=GaAlAs micropillar ca...
We observe a room-temperature low-threshold transition to a coherent polariton state in bulk GaN mic...
The semiconductor polariton laser promises a new source of coherent light, which, compared to conven...
The semiconductor polariton laser promises a new source of coherent light, which, compared to conven...
High-reflectance gratings promise new generations of vertical-cavity lasers that allow flexible cont...
The authors report on room temperature (RT) lasing action in two different types of nitride-based mi...
We study experimentally the lasing regime of a GaAs based microcavity sample under strong optical pu...
We report on the implementation of a GaAs-based, vertically emitting electrically pumped polariton l...
We report on the condensation of microcavity exciton polaritons under optical excitation in a microc...
Polariton lasing under electrical pumping is observed in a GaAs multi-quantum-well microcavity diode...
Despite their name polariton lasers do not rely on stimulated emission of cavity photons. The less s...
Semiconductor microcavities (MCs) offer a unique system for producing novel types of low threshold l...
We report on a systematic study of the phase transitions to polariton condensation (PC) and further ...
We introduce an electrically driven scheme to tune the polariton condensate energy in a high-finesse...
We report a systematic study of the temperature and excitation density behavior of an AlAs/AlGaAs, v...
Polariton lasing is demonstrated on the zero-dimensional states of single GaAs=GaAlAs micropillar ca...
We observe a room-temperature low-threshold transition to a coherent polariton state in bulk GaN mic...
The semiconductor polariton laser promises a new source of coherent light, which, compared to conven...
The semiconductor polariton laser promises a new source of coherent light, which, compared to conven...
High-reflectance gratings promise new generations of vertical-cavity lasers that allow flexible cont...
The authors report on room temperature (RT) lasing action in two different types of nitride-based mi...
We study experimentally the lasing regime of a GaAs based microcavity sample under strong optical pu...