Molecules of low symmetry often self-assemble in Nature to produce mesoscopic structures of symmetry higher than their constituent building blocks, including "super-cubic" structures. Such self-assembled hexagonal domains have recently been observed in orthorhombic polymeric ferroelectrics, and resemble those known in surfactants and in magnetic bubble domains. Ferroelastic nanodomains in ferroelectric films also self-assemble into bundles of tens of nanometers diameter within each ferroelectric domain that locally average polarization <P > and strain <s > to small values. Under applied stress or electric or magnetic field these bundles exhibit higher mobility than expected and switch polarization via magnetostriction plus piezo...
We present experimental evidence for polygonal domain faceting in the ferroelectric polymer poly(vin...
Very recently, the discovery of ultra-tetragonal PbTiO3 thin films was reported [Zhang et al., Scien...
The imminent inability of silicon-based memory devices to satisfy Moore?s Law is approaching rapidly...
Molecules of low symmetry often self-assemble in Nature to produce mesoscopic structures of symmetry...
Molecules of low symmetry often self-assemble in Nature to produce mesoscopic structures of symmetry...
Increasing miniaturization in ferroelectrics allows creating complex domain structures with novel fu...
With shrinking device sizes, controlling domain formation in nanoferroelectrics becomes crucial. Per...
With shrinking device sizes, controlling domain formation in nanoferroelectrics becomescrucial. Peri...
With shrinking device sizes, controlling domain formation in nanoferroelectrics becomes crucial. Per...
With shrinking device sizes, controlling domain formation in nanoferroelectrics becomes crucial. Per...
With shrinking device sizes, controlling domain formation in nanoferroelectrics becomes crucial. Per...
With shrinking device sizes, controlling domain formation in nanoferroelectrics becomes crucial. Per...
The imminent inability of silicon-based memory devices to satisfy Moore's Law is approaching rapidly...
Electric-polarization reversibility in nano-ferroelectric structures renders them as a convenient pl...
We present experimental evidence for polygonal domain faceting in the ferroelectric polymer poly(vin...
We present experimental evidence for polygonal domain faceting in the ferroelectric polymer poly(vin...
Very recently, the discovery of ultra-tetragonal PbTiO3 thin films was reported [Zhang et al., Scien...
The imminent inability of silicon-based memory devices to satisfy Moore?s Law is approaching rapidly...
Molecules of low symmetry often self-assemble in Nature to produce mesoscopic structures of symmetry...
Molecules of low symmetry often self-assemble in Nature to produce mesoscopic structures of symmetry...
Increasing miniaturization in ferroelectrics allows creating complex domain structures with novel fu...
With shrinking device sizes, controlling domain formation in nanoferroelectrics becomes crucial. Per...
With shrinking device sizes, controlling domain formation in nanoferroelectrics becomescrucial. Peri...
With shrinking device sizes, controlling domain formation in nanoferroelectrics becomes crucial. Per...
With shrinking device sizes, controlling domain formation in nanoferroelectrics becomes crucial. Per...
With shrinking device sizes, controlling domain formation in nanoferroelectrics becomes crucial. Per...
With shrinking device sizes, controlling domain formation in nanoferroelectrics becomes crucial. Per...
The imminent inability of silicon-based memory devices to satisfy Moore's Law is approaching rapidly...
Electric-polarization reversibility in nano-ferroelectric structures renders them as a convenient pl...
We present experimental evidence for polygonal domain faceting in the ferroelectric polymer poly(vin...
We present experimental evidence for polygonal domain faceting in the ferroelectric polymer poly(vin...
Very recently, the discovery of ultra-tetragonal PbTiO3 thin films was reported [Zhang et al., Scien...
The imminent inability of silicon-based memory devices to satisfy Moore?s Law is approaching rapidly...