V:YAG - a new passive Q-switch for diode-pumped solid-state lasers

We present the first use of V:YAG as a passive Q-switch for diode-pumped solid-state lasers. The ground- and excited-state absorption cross sections of V:YAG were measured to be sigma(gsa) = 3.0 x 10(-18) cm(2) and sigma(esa) = 1.4 x 10(-19) cm(2) at 1064 nm, and sigma(gsa) = 7.2 x 10(-18) cm(2) and sigma(esa) =7.4 x 10(-19) cm(2) at 1342 nm. Q-switched operation was demonstrated at 1064 nm and 1342 nm from a Nd:YVO4 microchip laser, producing pulses as short as 9.3 ns at 1342 nm with peak powers of 350 W.