Valence band offset of InN/AlN heterojunctions measured by x-ray photoelectron spectroscopy
- King, P. D. C.
- Veal, T. D.
- Jefferson, P. H.
- McConville, C. F.
- Wang, T.
- Parbrook, P. J.
- Lu, Hai
- Schaff, W. J.
Publication date
March 2007
DOIAbstract
The valence band offset of wurtzite-InN/AlN (0001) heterojunctions is determined by x-ray photoelectron spectroscopy to be 1.52 +/- 0.17 eV. Together with the resulting conduction band offset of 4.0 +/- 0.2 eV, a type-I heterojunction forms between InN and AlN in the straddling arrangement. (c) 2007 American Institute of Physics.</p
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