The radiation response of RadFET irradiated with 18 MV X-rays emitted from a linear accelerator was examined on threshold voltage shifts and trap densities. The measured threshold voltages were compared before and after irradiation. Trap densities calculated using various techniques in the gate oxide and oxide/silicon interface were interpreted. The ΔVth – D graph showed excellent linearity of up to just about 2 Gy. The RadFETs response to radiation started to deviate from linearity after 2 Gy due to increasing oxide trapped charges induced by electric field screening. The experimental outcomes are in good accordance with the fitting function given for RadFETs. Fixed and switching traps formed by irradiation were investigated. The density o...
The Radiation-Sensing Field Effect Transistor (RADFET) has been employed as a dosimeter for various ...
This paper mainly focuses on the effects of different gate biasing voltages and temperatures on seve...
The Metal -Oxide Semiconductor Field-Effect-Transistor (MOSFET, RadFET) is frequently used as a sens...
The irradiation response of Radiation Sensing Field Effect Transistor (RadFET), also known as MOSFET...
This work was supported in part by the European Union's Horizon 2020 research and innovation program...
The radiation-sensitive field-effect transistors (RADFETs) with an oxide thickness of 400 nm are irr...
This work was supported in part by the European Union's Horizon 2020 research and innovation program...
The RADFETs (pMOS dosimeters) were irradiated by ionizing radiation from Co-60 gamma-ray source to d...
The RADFETs (pMOS dosimeters) were irradiated by ionizing radiation from Co-60 gamma-ray source to d...
This work was supported in part by the European Union's Horizon 2020 research and innovation program...
In this paper, the results of radiation sensitive field effect transistors (Al-gate p-channel metal-...
In order to track “small dose effect” leading to stabilization of RADFETs with 1 μm thick oxide fabr...
This paper presented a study of MOSFETs as a sensor and dosimeter of ionizing radiation. The electri...
This upload contains raw data from the manuscript "Sensitivity and fading of irradiated RADFETs with...
Investigation of Al-gate p-channel MOSFETs sensitivity following irradiation using 200 and 280 kV X-...
The Radiation-Sensing Field Effect Transistor (RADFET) has been employed as a dosimeter for various ...
This paper mainly focuses on the effects of different gate biasing voltages and temperatures on seve...
The Metal -Oxide Semiconductor Field-Effect-Transistor (MOSFET, RadFET) is frequently used as a sens...
The irradiation response of Radiation Sensing Field Effect Transistor (RadFET), also known as MOSFET...
This work was supported in part by the European Union's Horizon 2020 research and innovation program...
The radiation-sensitive field-effect transistors (RADFETs) with an oxide thickness of 400 nm are irr...
This work was supported in part by the European Union's Horizon 2020 research and innovation program...
The RADFETs (pMOS dosimeters) were irradiated by ionizing radiation from Co-60 gamma-ray source to d...
The RADFETs (pMOS dosimeters) were irradiated by ionizing radiation from Co-60 gamma-ray source to d...
This work was supported in part by the European Union's Horizon 2020 research and innovation program...
In this paper, the results of radiation sensitive field effect transistors (Al-gate p-channel metal-...
In order to track “small dose effect” leading to stabilization of RADFETs with 1 μm thick oxide fabr...
This paper presented a study of MOSFETs as a sensor and dosimeter of ionizing radiation. The electri...
This upload contains raw data from the manuscript "Sensitivity and fading of irradiated RADFETs with...
Investigation of Al-gate p-channel MOSFETs sensitivity following irradiation using 200 and 280 kV X-...
The Radiation-Sensing Field Effect Transistor (RADFET) has been employed as a dosimeter for various ...
This paper mainly focuses on the effects of different gate biasing voltages and temperatures on seve...
The Metal -Oxide Semiconductor Field-Effect-Transistor (MOSFET, RadFET) is frequently used as a sens...