In twisted van der Waals (vdW) bilayers, intrinsic strain associated with the moiré superlattice and unintentionally introduced uniaxial strain may be present simultaneously. Both strains are able to lift the degeneracy of the E2g phonon modes in Raman spectra. Because of the different rotation symmetry of the two types of strain, the corresponding Raman intensity exhibits a distinct polarization dependence. We compare a 2.5° twisted MoS2 bilayer, in which the maximal intrinsic moiré strain is anticipated, and a natural MoS2 bilayer with an intentionally introduced uniaxial strain. By analyzing the frequency shift of the E2g doublet and their polarization dependence, we can not only determine the direction of unintentional uniaxial strain...
Strain serves as a powerful freedom to effectively, reversibly, and continuously engineer the physic...
Second-harmonic generation (SHG) is a powerful measurement technique to analyze the symmetry propert...
We report the influence of uniaxial tensile mechanical strain in the range 0–2.2% on the phonon spec...
The ability to control the atomic-scale behavior in quasi-two-dimensional crystals via twisting the ...
The material choice, layer thickness, and twist angle widely enrich the family of van der Waals hete...
We describe a facile technique based on polymer encapsulation to apply several percent (>5%) control...
We report deterministic control over moir\'e superlattice geometry in twisted bilayer graphene by im...
Strain engineering is an effective method to tune the properties of electrons and phonons in semicon...
Moiré superlattices can induce correlated-electronic phases in twisted van der Waals materials: stro...
International audienceWe use micro-Raman and photoluminescence (PL) spectroscopy at 300 K to investi...
The moire & PRIME; potential induced by nonuniform interlayer coupling in a twisted van der Waals bi...
Twisted 2D bilayer materials are created by artificial stacking of two monolayer crystal networks of...
We use micro-Raman and photoluminescence (PL) spectroscopy at 300 K to investigate the influence of ...
By performing density functional theory-based ab initio calculations, Raman-active phonon modes of s...
Layered materials such as graphite and transition metal dichalcogenides have extremely anisotropic m...
Strain serves as a powerful freedom to effectively, reversibly, and continuously engineer the physic...
Second-harmonic generation (SHG) is a powerful measurement technique to analyze the symmetry propert...
We report the influence of uniaxial tensile mechanical strain in the range 0–2.2% on the phonon spec...
The ability to control the atomic-scale behavior in quasi-two-dimensional crystals via twisting the ...
The material choice, layer thickness, and twist angle widely enrich the family of van der Waals hete...
We describe a facile technique based on polymer encapsulation to apply several percent (>5%) control...
We report deterministic control over moir\'e superlattice geometry in twisted bilayer graphene by im...
Strain engineering is an effective method to tune the properties of electrons and phonons in semicon...
Moiré superlattices can induce correlated-electronic phases in twisted van der Waals materials: stro...
International audienceWe use micro-Raman and photoluminescence (PL) spectroscopy at 300 K to investi...
The moire & PRIME; potential induced by nonuniform interlayer coupling in a twisted van der Waals bi...
Twisted 2D bilayer materials are created by artificial stacking of two monolayer crystal networks of...
We use micro-Raman and photoluminescence (PL) spectroscopy at 300 K to investigate the influence of ...
By performing density functional theory-based ab initio calculations, Raman-active phonon modes of s...
Layered materials such as graphite and transition metal dichalcogenides have extremely anisotropic m...
Strain serves as a powerful freedom to effectively, reversibly, and continuously engineer the physic...
Second-harmonic generation (SHG) is a powerful measurement technique to analyze the symmetry propert...
We report the influence of uniaxial tensile mechanical strain in the range 0–2.2% on the phonon spec...