In this paper, it is present a model to simulate Four-wave mixing in quantum dot semiconductor optical amplifier, taking into account the influence of carrier heating at reservoir. The numerical calculations show that; the carrier heating relaxation at reservoir demonstrates a significant impact on excited state occupation probability, and opposite occurs with ground state. Also, the conversion efficiency is shown a good match with experiment data
A numerical model of four-wave mixing between 2-ps pulses in a tensile-strained bulk semiconductor o...
The gain and phase dynamics of InAs∕GaAs quantum dot amplifiers are studied using single and two-col...
Single-color and two-color pump-probe measurements are used to analyze carrier dynamics in InAs/GaAs...
This article may be downloaded for personal use only. Any other use requires prior permission of the...
An analytical model for the small-signal cross gain modulation (XGM) in undoped quantum dot (QD)- se...
Nondegenerate four-wave mixing in semiconductor optical amplifiers was studied both as a spectroscop...
This article may be downloaded for personal use only. Any other use requires prior permission of the...
We configure the input pump pulse energy of semiconductor optical amplifiers (SOAs) to maximize the ...
By means of an electron hole rate equation model we explain the phase dynamics of a quantum dot semi...
Experimental results of Four-Wave Mixing in linear and nonlinear semiconductor optical amplifiers of...
An experimental technique based on frequency-resolved four-wave mixing is proposed for the investiga...
A rate equation model preserving charge neutrality for quantum-dot semiconductor optical amplifiers ...
A rate equation model preserving charge neutrality for quantum-dot semiconductor optical amplifiers ...
The gain saturation behaviors and noise figure are numerically analyzed for quantum-dot semiconducto...
A numerical model of four-wave mixing between 2-ps pulses in a tensile-strained bulk semiconductor o...
A numerical model of four-wave mixing between 2-ps pulses in a tensile-strained bulk semiconductor o...
The gain and phase dynamics of InAs∕GaAs quantum dot amplifiers are studied using single and two-col...
Single-color and two-color pump-probe measurements are used to analyze carrier dynamics in InAs/GaAs...
This article may be downloaded for personal use only. Any other use requires prior permission of the...
An analytical model for the small-signal cross gain modulation (XGM) in undoped quantum dot (QD)- se...
Nondegenerate four-wave mixing in semiconductor optical amplifiers was studied both as a spectroscop...
This article may be downloaded for personal use only. Any other use requires prior permission of the...
We configure the input pump pulse energy of semiconductor optical amplifiers (SOAs) to maximize the ...
By means of an electron hole rate equation model we explain the phase dynamics of a quantum dot semi...
Experimental results of Four-Wave Mixing in linear and nonlinear semiconductor optical amplifiers of...
An experimental technique based on frequency-resolved four-wave mixing is proposed for the investiga...
A rate equation model preserving charge neutrality for quantum-dot semiconductor optical amplifiers ...
A rate equation model preserving charge neutrality for quantum-dot semiconductor optical amplifiers ...
The gain saturation behaviors and noise figure are numerically analyzed for quantum-dot semiconducto...
A numerical model of four-wave mixing between 2-ps pulses in a tensile-strained bulk semiconductor o...
A numerical model of four-wave mixing between 2-ps pulses in a tensile-strained bulk semiconductor o...
The gain and phase dynamics of InAs∕GaAs quantum dot amplifiers are studied using single and two-col...
Single-color and two-color pump-probe measurements are used to analyze carrier dynamics in InAs/GaAs...