Add to ORKGLarge-area, roll-to-roll fabrication of thin-film circuits demands layer thickness uniformity over large areas. Previously, a 10-nm-thick dry bi-layer dielectric based on aluminium oxide (AlOx) prepared by UV-ozone oxidation and n-octylphosphonic acid (C8PA) monolayer prepared by vacuum evaporation has been developed for organic thin-film transistors (OTFTs). Here we compare such OTFTs to similar transistors that incorporate ALD-AlOx/C8PA bi-layer
The strong sensitivity of organic/polymeric semiconductors to the exposure to O 2 and H 2 O atmosphe...
Anodization of aluminium is very well known method to produce thick protective layers of aluminium o...
Anodization of aluminium is very well known method to produce thick protective layers of aluminium o...
Large-area, roll-to-roll fabrication of thin-film circuits demands layer thickness uniformity over l...
Large-area, roll-to-roll fabrication of thin-film circuits demands layer thickness uniformity over l...
Large-area, roll-to-roll fabrication of thin-film circuits demands layer thickness uniformity over l...
We have developed a gate dielectric for low-voltage organic thin-film transistors based on an inorga...
Four atmospheric pressure ozone oxidation methods were used to produce ultra-thin layers of aluminiu...
Four atmospheric pressure ozone oxidation methods were used to produce ultra-thin layers of aluminum...
A self-assembled monolayer of n-octylphosphonic acid (C8PA) is prepared from vapor phase in vacuum. ...
Effect of heat treatment in aluminium oxide (AlOx) preparation employing UV/ozone exposure of therma...
Dry method for monolayer deposition of n-octylphosphonic acid (C8PA) on the surface of aluminium oxi...
AbstractFour atmospheric pressure ozone oxidation methods were used to produce ultra-thin layers of ...
A low-temperature solution-processed high-k gate dielectric layer for use in a high-performance solu...
Four atmospheric pressure ozone oxidation methods were used to produce ultra-thin layers of aluminum...
The strong sensitivity of organic/polymeric semiconductors to the exposure to O 2 and H 2 O atmosphe...
Anodization of aluminium is very well known method to produce thick protective layers of aluminium o...
Anodization of aluminium is very well known method to produce thick protective layers of aluminium o...
Large-area, roll-to-roll fabrication of thin-film circuits demands layer thickness uniformity over l...
Large-area, roll-to-roll fabrication of thin-film circuits demands layer thickness uniformity over l...
Large-area, roll-to-roll fabrication of thin-film circuits demands layer thickness uniformity over l...
We have developed a gate dielectric for low-voltage organic thin-film transistors based on an inorga...
Four atmospheric pressure ozone oxidation methods were used to produce ultra-thin layers of aluminiu...
Four atmospheric pressure ozone oxidation methods were used to produce ultra-thin layers of aluminum...
A self-assembled monolayer of n-octylphosphonic acid (C8PA) is prepared from vapor phase in vacuum. ...
Effect of heat treatment in aluminium oxide (AlOx) preparation employing UV/ozone exposure of therma...
Dry method for monolayer deposition of n-octylphosphonic acid (C8PA) on the surface of aluminium oxi...
AbstractFour atmospheric pressure ozone oxidation methods were used to produce ultra-thin layers of ...
A low-temperature solution-processed high-k gate dielectric layer for use in a high-performance solu...
Four atmospheric pressure ozone oxidation methods were used to produce ultra-thin layers of aluminum...
The strong sensitivity of organic/polymeric semiconductors to the exposure to O 2 and H 2 O atmosphe...
Anodization of aluminium is very well known method to produce thick protective layers of aluminium o...
Anodization of aluminium is very well known method to produce thick protective layers of aluminium o...