Presented is the power-scaling characteristics of microchip vertical external-cavity surface-emitting lasers which include grating apertures for mode selection. Multi-Watt multi-lateral-mode emission at a wavelength of 1060 nm is obtained with sub-linear increase in maximum output power with aperture-size. It is also shown that the polarisation is only set by the grating lines for high-order modes which interact sufficiently with the grating
We report the modal and polarisation properties of a 1300 nm GaInNAs microchip VECSEL and their depe...
Surface-emitting semiconductor lasers can make use of external cavities and optical pumping techniqu...
This paper demonstrates a plano-concave microchip vertical-external cavity emitting laser (mu-VECSEL...
Presented is the power-scaling characteristics of microchip vertical external-cavity surface-emittin...
Recently multiwatt power levels have been generated from Vertical External-Cavity Surface-Emitting L...
Monolithic vertical external cavity surface emitting lasers of cavity mode volume 350 mW in a TEM00 ...
In this paper we have demonstrated monolithic "microchip" vertical external-cavity surface-emitting ...
A new vertical-cavity surface-emitting laser structure employing a thin microlens is suggested and n...
A report is presented on an optically-pumped vertical-external-cavity surface-emitting laser at 1.55...
The extraction of high power with high beam quality from semiconductor lasers has long been a goal o...
Vertical external cavity semiconductor lasers have emerged as an interesting technology based on cur...
Data are presented demonstrating lithographic vertical-cavity surface-emitting lasers (VCSELs) and t...
There exists a plethora of applications which require high-powered, pulsed laser systems within the ...
Vertical cavity surface emitting lasers (VCSELs) are semiconductor lasers with extremely short (~1 w...
Ever since the first laser demonstration in 1960, applications for laser systems have increased to i...
We report the modal and polarisation properties of a 1300 nm GaInNAs microchip VECSEL and their depe...
Surface-emitting semiconductor lasers can make use of external cavities and optical pumping techniqu...
This paper demonstrates a plano-concave microchip vertical-external cavity emitting laser (mu-VECSEL...
Presented is the power-scaling characteristics of microchip vertical external-cavity surface-emittin...
Recently multiwatt power levels have been generated from Vertical External-Cavity Surface-Emitting L...
Monolithic vertical external cavity surface emitting lasers of cavity mode volume 350 mW in a TEM00 ...
In this paper we have demonstrated monolithic "microchip" vertical external-cavity surface-emitting ...
A new vertical-cavity surface-emitting laser structure employing a thin microlens is suggested and n...
A report is presented on an optically-pumped vertical-external-cavity surface-emitting laser at 1.55...
The extraction of high power with high beam quality from semiconductor lasers has long been a goal o...
Vertical external cavity semiconductor lasers have emerged as an interesting technology based on cur...
Data are presented demonstrating lithographic vertical-cavity surface-emitting lasers (VCSELs) and t...
There exists a plethora of applications which require high-powered, pulsed laser systems within the ...
Vertical cavity surface emitting lasers (VCSELs) are semiconductor lasers with extremely short (~1 w...
Ever since the first laser demonstration in 1960, applications for laser systems have increased to i...
We report the modal and polarisation properties of a 1300 nm GaInNAs microchip VECSEL and their depe...
Surface-emitting semiconductor lasers can make use of external cavities and optical pumping techniqu...
This paper demonstrates a plano-concave microchip vertical-external cavity emitting laser (mu-VECSEL...