Evolution of the valence-band structure at gradually increasing copper content has been analysed by x-ray photoelectron spectroscopy (XPS) in In2Se3, CuIn5Se8, CuIn3Se5, and CuInSe2 single crystals. A comparison of these spectra with calculated total and angular-momentum resolved density-of-states (DOS) revealed the main trends of this evolution. The formation of the theoretically predicted gap between the bonding and non-bonding states has been observed in both experimental XPS spectra and theoretical DOS
Native point defects in undoped samples of CuInSe2 (CIS) have been identified by a multiple-edge ref...
Single crystals of the Cu xTiSe 2 compound with x = 0.05, 0.09, and 0.33 have been grown. Resonance ...
International audienceCrystallographic and electronic structures of binary compounds GaSe and InSe, ...
Evolution of the valence-band structure at gradually increasing copper content has been analysed by ...
The interface formation between stoichiometric chalcopyrite CuInSe2 and the copper deficient defect ...
We have used the Vienna ab-initio Simulation Package (VASP) to study the electronic and optical prop...
Clean and ordered chalcopyrite CuInSe2 surfaces are a precondition for the study of the electronic s...
Hard x-ray photoelectron spectroscopy is used to examine the partial density of states of Cu(In,Ga)S...
A review of several optical and structural parameters of CuInSe2 (CIS) and various CuInxSey Ordered ...
High-quality single crystals of CuInSe2 with near-stoichiometric elemental compositions were irradia...
Hard x ray photoelectron spectroscopy is used to examine the partial density of states of Cu In,Ga ...
The valence band spectra of a vacuum cleaved CuInSe₂ (011) surface were measured with synchrotron ra...
An experimental study of the electronic structure of copper intercalated titanium dichalcogenides in...
Cu(In,Ga)Se2 is one of the most promising material systems for thin film photovoltaics with record e...
Single crystals of a new ternary chalcogenide Cu3InSe4 were obtained by induction melting, allowing ...
Native point defects in undoped samples of CuInSe2 (CIS) have been identified by a multiple-edge ref...
Single crystals of the Cu xTiSe 2 compound with x = 0.05, 0.09, and 0.33 have been grown. Resonance ...
International audienceCrystallographic and electronic structures of binary compounds GaSe and InSe, ...
Evolution of the valence-band structure at gradually increasing copper content has been analysed by ...
The interface formation between stoichiometric chalcopyrite CuInSe2 and the copper deficient defect ...
We have used the Vienna ab-initio Simulation Package (VASP) to study the electronic and optical prop...
Clean and ordered chalcopyrite CuInSe2 surfaces are a precondition for the study of the electronic s...
Hard x-ray photoelectron spectroscopy is used to examine the partial density of states of Cu(In,Ga)S...
A review of several optical and structural parameters of CuInSe2 (CIS) and various CuInxSey Ordered ...
High-quality single crystals of CuInSe2 with near-stoichiometric elemental compositions were irradia...
Hard x ray photoelectron spectroscopy is used to examine the partial density of states of Cu In,Ga ...
The valence band spectra of a vacuum cleaved CuInSe₂ (011) surface were measured with synchrotron ra...
An experimental study of the electronic structure of copper intercalated titanium dichalcogenides in...
Cu(In,Ga)Se2 is one of the most promising material systems for thin film photovoltaics with record e...
Single crystals of a new ternary chalcogenide Cu3InSe4 were obtained by induction melting, allowing ...
Native point defects in undoped samples of CuInSe2 (CIS) have been identified by a multiple-edge ref...
Single crystals of the Cu xTiSe 2 compound with x = 0.05, 0.09, and 0.33 have been grown. Resonance ...
International audienceCrystallographic and electronic structures of binary compounds GaSe and InSe, ...