Flexible vertical structure GaN-based light emitting diodes on an AuSn substrate
- Tian, P. F.
- Xie, E. Y.
- Gong, Z.
- Chen, Z. Z.
- Yu, T. J.
- Sun, Y. J.
- Qi, S. L.
- Chen, Y. J.
- Zhang, Y. F.
- Calvez, S.
- Gu, Erdan
- Zhang, Guoyi
- Dawson, Martin
Publication date
October 2011
DOI Publisher
Institute of Electrical and Electronics Engineers (IEEE)Abstract
By combining the metal bonding/debonding and laser lift off techniques, a new approach to fabricating flexible vertical structure GaN-based light emitting diodes (F-LEDs) has been developed. The performance of these F-LEDs under different bending radii was investigated in detail
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